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The development of neuromorphic hardware capable of detecting and recognizing moving targets through an in-sensor computing strategy is considered to be an important component of the construction of edge computing systems with distributed computation. In addition to responsiveness to visible light, the implementation of neuromorphic hardware should also demonstrate the ability to sense and process nonvisible light, which is essential for tracking target object trajectories in specialized environments. In this work, we fabricated an organic synaptic transistor with a near-infrared (NIR) response by incorporating doped LaF: Yb/Ho upconversion quantum dots (UCQDs) into the channel of a Poly3-hexylthiophene (P3HT)-based organic field effect transistor (FET), serving as charge trapping and infrared sensing sites. The obtained synaptic transistor not only replicates common synaptic behaviors when exposed to NIR illumination but also demonstrates potential applications for the dynamic trajectory recognition of animals in the dark. Compared to other monitoring technologies, P3HT transistors doped with LaF: Yb/Ho UCQDs exhibit distinct advantages, including a NIR response, high-efficiency computing, and sensitivity, which provide an experimental foundation and a design reference for the development of next-generation intelligent dynamic image recognition systems.
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http://dx.doi.org/10.1021/acs.jpclett.4c02238 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ alternating layers of AlO, TiO, and SiO to optimize the gate-oxide stack. Each GI material is strategically selected for complementary functionalities: AlO improves the interfacial quality at both the GI/semiconductor and GI/metal interfaces, thereby enhancing device stability and performance; TiO increases the overall dielectric constant; and SiO suppresses leakage current by serving as a high-energy barrier between AlO and TiO.
View Article and Find Full Text PDFAdv Mater
August 2025
Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.
Growing interest in organic electrochemical synaptic transistors (OECT-STrs) based on conjugated polymer mixed ionic-electronic conductors (CP-MIECs) has intensified, leading to the need to establish clear design rules and fundamentally understand the distinct roles of crystalline and amorphous domains in the electrochemical doping behavior of CP-MIEC films. Here, OECT-STrs based on regioregular-block-regiorandom (regioblock) conjugated copolymers with precisely controlled crystallinity are demonstrated. The crystallinity of a poly(3-hexylthiophene) regioblock copolymer is systematically tuned by varying the fraction of regiorandom blocks without altering the geometry or orientation of the crystalline phase.
View Article and Find Full Text PDFACS Nano
August 2025
School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University, Xinxiang 453007, China.
Current spectral adaptation of vision systems is volatile operation that relies on cascading optical filters and electronic components, resulting in bulky architectures and high energy consumption. Inspired by the spectrally tunable vision of a migratory fish, we propose a spectral-adaptive nonvolatile-operating device based on a two-dimensional MoS channel with CuInPS (CIPS) gate, in which the ferroelectric-photosensitive synergy of CIPS routes the carriers, emulating retina's adaptive feedback. The ferroelectric polarization dynamically tunes spectral synaptic plasticity and keeps the high spectral suppression ratio up to 10 without constant gate voltage or optical filters, which enhances target spectral feature extraction and elevates image recognition accuracy in cluttered scenes from 71.
View Article and Find Full Text PDFSmall
August 2025
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
Neuromorphic systems that emulate the information transmission of biological neural networks face challenges in their integration owing to the disparate features of neuron- and synapse-mimicking devices, leading to complex and inefficient system architectures. Herein, the study proposes a steep-switching nonvolatile field-effect transistor leveraging a CuInPS/h-BN/WSe heterostructure to enable reconfigurable neuron- and synapse-modes by electrostatically modulating the carrier density of the channel to control its Fermi level, thereby facilitating leaky-integrate-and-fire (LiF) neuron operation. In addition, an additional ferroelectric-gating effect enhances the chemical potential of the channel through interactions between ferroelectric dipoles and channel carriers, allowing LiF operation at a reduced operating bias condition.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Department of Physics "E. R. Caianiello", University of Salerno, Fisciano (SA), 84084, Italy.
As artificial intelligence continues to evolve, neuromorphic technologies, which emulate biological neural networks, are increasingly seen as a promising direction. Two-dimensional materials are considered promising for neuromorphic applications due to their tunable electrical and optoelectronic properties. In this work, a back-gated tin disulfide (SnS) field-effect transistor (FET) is electrically and optoelectronically characterized at different temperatures (80, 295, and 380 K), pressures (ambient and 10 mbar), and illumination conditions (dark and laser light from 420 to 800 nm).
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