Single Te Nanoribbon for Disrupting Conventional Sensitivity-Power Limits of Flexible Strain Sensors.

Flexible strain sensors are pivotal for the advancement of robotics, wearable healthcare, and human-machine interaction in the post-Moore era. However, conventional materials struggle to simultaneously achieve high sensitivity, a broad strain range, and low power consumption for cutting-edge applications. In this work, the issue is addressed through single crystal 1D tellurium nanoribbons (NRs), which are synthesized on SiO/Si substrate by hydrogen-assisted chemical vapor deposition (CVD) method.

Pulsed laser-assisted direct fabrication of MoWS alloy-based flexible strain sensors with superior performance for high-temperature applications.

Flexible strain sensors with high sensitivity and stability at high temperatures are significantly desirable for their accurate and long-term signal detection in wearable devices, environment monitoring, and aerospace electronics. Despite the considerable efforts in materials development and structural design, it remains a challenge to develop highly sensitive, flexible strain sensors operating at high temperatures due to the trade-off between sensitivity and stability for the representative sensing materials. Herein, we develop a high-temperature flexible sensor using MoWS alloy films.

Highly customizable, ultrawide-temperature free-form flexible sensing electronic systems based on medium-entropy alloy paintings.

High-performance flexible sensing electronics on complex surfaces operating across broad temperatures are critical for aerospace and industrial applications. However, existing flexible sensors and materials face limitations in sensitivity and thermal stability. Here, we report an ink-engineering strategy to directly print single-face MoWNb medium entropy alloy paints on arbitrary surfaces without complicated post-processing.

Reconfigurable Artificial Synapses Based on Ambipolar Environmentally Stable Tellurium for Neuromorphic Computing.

Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for next-generation computing and sensing systems. However, most studies of artificial synapses mimic only static plasticity, which is far from achieving the complex behaviors of the human brain. Here, we report a reliable neuromorphic computing system that integrates a top floating gate memory architecture and uses peculiar ambipolar tellurium (Te) as a channel material to fabricate reliable nonvolatile memory cells.

Large Area and Flexible Flexion Sensing Matrix for Detection of Strain Distribution in Bendable and Curved Surface.

Flexible flexion sensors are attracting attention due to their wide range of applications. It is urgent to develop a flexible sensor matrix to detect strain distribution on curved surfaces for object surface posture reconstruction, fault detection, and predictive maintenance. Herein, a convenient and universal method for preparing a flexible flexion sensor matrix is proposed using a versatile screen-printing technique.

Breaking the Saturation of Sensitivity for Ultrawide Range Flexible Pressure Sensors by Soft-Strain Effect.

The flexible pressure sensors with a broad pressure range and unsaturated sensitivity are highly desired in practical applications. However, pressure sensors by piezoresistive effect are always limited by the compressibility of sensing layers, resulting in a theoretically decreasing sensitivity of less than 100%. Here, a unique strategy is proposed that utilizes the strain effect, simultaneously achieving a trade-off between a wider pressure detection range and unsaturated sensitivity.

Vapor Deposition of Bilayer 3R MoS with Room-Temperature Ferroelectricity.

Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD).

CVD Synthesis of Twisted Bilayer WS with Tunable Second Harmonic Generation.

The introduction of rotational freedom by twist angles in twisted bilayer (TB) transition metal dichalcogenides (TMDCs) can tailor the inherent properties of the TMDCs, which provides a promising platform to investigate the exotic physical properties. However, direct synthesis of high-quality TB-TMDCs with full twist angles is significantly challenging due to the substantial energy barriers during crystal growth. Here, a modified chemical vapor deposition strategy is proposed to synthesize TB-WS with a wide twist angle range from 0° to 120°.

Reconfiguring nucleation for CVD growth of twisted bilayer MoS with a wide range of twist angles.

Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS with twist angles from 0° to 120°.

Scalable Manufacturing of Large-Area Pressure Sensor Array for Sitting Posture Recognition in Real Time.

Pressure sensors are considered the key technology for potential applications in real-time health monitoring, artificial electronic skins, and human-machine interfaces. Despite the significant progress in developing novel sensitive materials and constructing unique sensor structures, it remains challenging to fabricate large-area pressure sensor arrays due to the involvement of complex procedures including photolithography, laser writing, or coating. Herein, a scalable manufacturing approach for the realization of pressure sensor arrays with substantially enlarged sensitive areas is proposed using a versatile screen-printing technique.

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor.

Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ ), which is up to 23.

Laser-assisted synthesis of two-dimensional transition metal dichalcogenides: a mini review.

The atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted the researcher's interest in the field of flexible electronics due to their high mobility, tunable bandgaps, and mechanical flexibility. As an emerging technique, laser-assisted direct writing has been used for the synthesis of TMDCs due to its extremely high preparation accuracy, rich light-matter interaction mechanism, dynamic properties, fast preparation speed, and minimal thermal effects. Currently, this technology has been focused on the synthesis of 2D graphene, while there are few literatures that summarize the progress in direct laser writing technology in the synthesis of 2D TMDCs.

Enhancing the Toughness of Free-Standing Polyimide Films for Advanced Electronics Applications: A Study on the Impact of Film-Forming Processes.

High-quality and free-standing polyimide (PI) film with desirable mechanical properties and uniformity is in high demand due to its widespread applications in highly precise flexible and chip-integrated sensors. In this study, a free-standing PI film with high toughness was successfully prepared using a diamine monomer with ether linkages. The prepared PI films exhibited significantly superior mechanical properties compared to PI films of the same molecular structure, which can be attributed to the systematic exploration of the film-forming process.

Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides.

The transition metal trichalcogenides (TMTCs) are quasi-one-dimensional (1D) MX3-type van der Waals layered semiconductors, where M is a transition metal element of groups IV and V, and X indicates chalcogen element. Due to the unique quasi-1D crystalline structures, they possess several novel electrical properties such as variable bandgaps, charge density waves, and superconductivity, and highly anisotropic optical, thermoelectric, and magnetic properties. The study of TMTCs plays an essential role in the 1D quantum materials field, enabling new opportunities in the material research dimension.

The Soft-Strain Effect Enabled High-Performance Flexible Pressure Sensor and Its Application in Monitoring Pulse Waves.

Flexible and wearable pressure sensors attached to human skin are effective and convenient in accurate and real-time tracking of various physiological signals for disease diagnosis and health assessment. Conventional flexible pressure sensors are constructed using compressible dielectric or conductive layers, which are electrically sensitive to external mechanical stimulation. However, saturated deformation under large compression significantly restrains the detection range and sensitivity of such sensors.

Large-Scale Ultra-Robust MoS Patterns Directly Synthesized on Polymer Substrate for Flexible Sensing Electronics.

Synthesis of large-area patterned MoS is considered the principle base for realizing high-performance MoS -based flexible electronic devices. Patterning and transferring MoS films to target flexible substrates, however, require conventional multi-step photolithography patterning and transferring process, despite tremendous progress in the facilitation of practical applications. Herein, an approach to directly synthesize large-scale MoS patterns that combines inkjet printing and thermal annealing is reported.

Polarized Cu-Bi Site Pairs for Non-Covalent to Covalent Interaction Tuning toward N Photoreduction.

A universal atomic layer confined doping strategy is developed to prepare Bi O Br materials incorporating isolated Cu atoms. The local polarization can be created along the CuOBi atomic interface, which enables better electron delocalization for effective N activation. The optimized Cu-Bi O Br atomic layers show 5.

Metamaterial Absorbers: From Tunable Surface to Structural Transformation.

Since the first demonstration, remarkable progress has been made in the theoretical analysis, structural design, numerical simulation, and potential applications of metamaterial absorbers (MAs). With the continuous advancement of novel materials and creative designs, the absorption of MAs is significantly improved over a wide frequency spectrum from microwaves to the optical regime. Further, the integration of active elements into the MA design allows the dynamical manipulation of electromagnetic waves, opening a new platform to push breakthroughs in metadevices.

Ultra-Robust and Extensible Fibrous Mechanical Sensors for Wearable Smart Healthcare.

Fibrous material with high strength and large stretchability is an essential component of high-performance wearable electronic devices. Wearable electronic systems require a material that is strong to ensure durability and stability, and a wide range of strain to expand their applications. However, it is still challenging to manufacture fibrous materials with simultaneously high mechanical strength and the tensile property.

Solid-Ionic Memory in a van der Waals Heterostructure.

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS/BiFeO/SrTiO van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating.

Programmable patterned MoS film by direct laser writing for health-related signals monitoring.

The two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising flexible electronic materials for strategic flexible information devices. Large-area and high-quality patterned materials were usually required by flexible electronics due to the limitation from the process of manufacturing and integration. However, the synthesis of large-area patterned 2D TMDs with high quality is difficult.

Machine Learning Driven Synthesis of Few-Layered WTe with Geometrical Control.

Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has attracted substantial research interest not only to achieve competitive electronic applications but also for the exploration of fundamental physical properties. Controllable synthesis of high-quality 1D nanoribbons (NRs) is thus highly desirable and essential for further study. Here, we report the implementation of supervised machine learning (ML) for the chemical vapor deposition (CVD) synthesis of high-quality quasi-1D few-layered WTe NRs.

Inversion symmetry broken in 2H phase vanadium-doped molybdenum disulfide.

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received much attention in nonlinear optical applications due to their unique crystal structures and second harmonic generation (SHG) efficiency. However, SHG signals in TMDs show a layer-dependent behavior, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer) of TMDs. Herein, we synthesized monolayer and bilayer 2H and 3R phase vanadium (V)-doped MoS crystal.

Two-step chemical vapor deposition synthesis of NiTe-MoS vertical junctions with improved MoS transistor performance.

The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during the traditional metal integration process, difficulties arise due to inevitable physical damage and selective doping. Two-dimensional metal-semiconductor junctions have attracted attention for the potential application to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe-MoS metal-semiconductor vertical junctions where the upper NiTe selectively nucleates at the edge of the underlying MoS.