Reconfigurable Artificial Synapses Based on Ambipolar Environmentally Stable Tellurium for Neuromorphic Computing.

Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for next-generation computing and sensing systems. However, most studies of artificial synapses mimic only static plasticity, which is far from achieving the complex behaviors of the human brain. Here, we report a reliable neuromorphic computing system that integrates a top floating gate memory architecture and uses peculiar ambipolar tellurium (Te) as a channel material to fabricate reliable nonvolatile memory cells.

Multifunctional Logic-in-Memory Circuits Based on Reconfigurable WSe Transistors via Enhanced Ambipolarity.

Ambipolar two-dimensional semiconductors exhibit electrostatically modulable carrier polarity, enabling reconfigurable electronic functionalities critical for the development of logic-in-memory computing architectures. However, the ambipolar conduction is generally weak and unbalanced, in particular, under ambient operating conditions. Here, we develop a universal nonvolatile and reconfigurable device architecture based on tungsten diselenide (WSe) and delicately enhance its ambipolar transport via scanning probe lithography, demonstrating on/off current ratios approaching 10 for both electron and hole conductions.

Scalable Layer-Controlled Oxidation of BiOSe for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents.

Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing BiOSe single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-BiSeO/BiOSe heterostructures.

Achieving Reliable and Ultrafast Memristors via Artificial Filaments in Silk Fibroin.

The practical implementation of memristors in neuromorphic computing and biomimetic sensing suffers from unexpected temporal and spatial variations due to the stochastic formation and rupture of conductive filaments (CFs). Here, the biocompatible silk fibroin (SF) is patterned with an on-demand nanocone array by using thermal scanning probe lithography (t-SPL) to guide and confine the growth of CFs in the silver/SF/gold (Ag/SF/Au) memristor. Benefiting from the high fabrication controllability, cycle-to-cycle (temporal) standard deviation of the set voltage for the structured memristor is significantly reduced by ≈95.

Controlled Doping Engineering in 2D MoS Crystals toward Performance Augmentation of Optoelectronic Devices.

Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS crystals through a single-step deposition method to improve the photodetection ability of MoS flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS lattice and the Sn dopant leads to an additional strain in the host lattice.

High-performance ultra-violet phototransistors based on CVT-grown high quality SnS flakes.

van der Waals layered two-dimensional (2D) metal dichalcogenides, such as SnS, have garnered great interest owing to their new physics in the ultrathin limit, and become potential candidates for the next-generation electronics and/or optoelectronics fields. Herein, we report high-performance UV photodetectors established on high quality SnS flakes and address the relatively lower photodetection capability of the thinner flakes a compatible gate-controlling strategy. SnS flakes with different thicknesses were mechanically exfoliated from CVT-grown high-quality 2H-SnS single crystals.