Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInPS Via Large Strain Gradient.

The interplay between flexoelectric and optoelectronic characteristics provides a paradigm for studying emerging phenomena in various 2D materials. However, an effective way to induce a large and tunable strain gradient in 2D devices remains to be exploited. Herein, we propose a strategy to induce large flexoelectric effect in 2D ferroelectric CuInPS by constructing a 1D-2D mixed-dimensional heterostructure.

Adaptive Neural Activation and Neuromorphic Processing via Drain-Injection Threshold-Switching Float Gate Transistor Memory.

Hetero-modulated neural activation is vital for adaptive information processing and learning that occurs in brain. To implement brain-inspired adaptive processing, previously various neurotransistors oriented for synaptic functions are extensively explored, however, the emulation of nonlinear neural activation and hetero-modulated behaviors are not possible due to the lack of threshold switching behavior in a conventional transistor structure. Here, a 2D van der Waals float gate transistor (FGT) that exhibits steep threshold switching behavior, and the emulation of hetero-modulated neuron functions (integrate-and-fire, sigmoid type activation) for adaptive sensory processing, are reported.

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.

As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the 'speed-retention-endurance' dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LiMoS as edge contact, we show that ultrafast (10-100 ns) and robust (endurance>10 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS as semiconductor channel.

Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors.

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors.

Approaching strain limit of two-dimensional MoS via chalcogenide substitution.

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS, remains cumbersome. Here we report a facile strategy for the fabrication of highly strained MoS via chalcogenide substitution reaction (CSR) of MoTe with lattice inheritance.

A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing.

Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored a surface acceptor (ZnPc) for subthreshold operation.

High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr Wafer.

Considering the disadvantages of the common methods for CsPbBr single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr wafers. The effects of HP temperature on the phase purity of HP-CsPbBr wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr wafers has been optimized to be 150 °C, and the HP-CsPbBr wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse.

A Reconfigurable Two-WSe -Transistor Synaptic Cell for Reinforcement Learning.

Reward-modulated spike-timing-dependent plasticity (R-STDP) is a brain-inspired reinforcement learning (RL) rule, exhibiting potential for decision-making tasks and artificial general intelligence. However, the hardware implementation of the reward-modulation process in R-STDP usually requires complicated Si complementary metal-oxide-semiconductor (CMOS) circuit design that causes high power consumption and large footprint. Here, a design with two synaptic transistors (2T) connected in a parallel structure is experimentally demonstrated.

Ultrafast and stable phase transition realized in MoTe-based memristive devices.

Phase engineering of two-dimensional transition metal dichalcogenides has received increasing attention in recent years due to its atomically thin nature and polymorphism. Here, we first realize an electric-field-induced controllable phase transition between semiconducting 2H and metallic 1T' phases in MoTe memristive devices. The device performs stable bipolar resistive switching with a cycling endurance of over 10, an excellent retention characteristic of over 10 s at an elevated temperature of 85 °C and an ultrafast switching of ∼5 ns for SET and ∼10 ns for RESET.

Threshold switching memristor-based stochastic neurons for probabilistic computing.

Biological neurons exhibit dynamic excitation behavior in the form of stochastic firing, rather than stiffly giving out spikes upon reaching a fixed threshold voltage, which empowers the brain to perform probabilistic inference in the face of uncertainty. However, owing to the complexity of the stochastic firing process in biological neurons, the challenge of fabricating and applying stochastic neurons with bio-realistic dynamics to probabilistic scenarios remains to be fully addressed. In this work, a novel CuS/GeSe conductive-bridge threshold switching memristor is fabricated and singled out to realize electronic stochastic neurons, which is ascribed to the similarity between the stochastic switching behavior observed in the device and that of biological ion channels.

2D Cu S /PtS /WSe Double Heterojunction Bipolar Transistor with High Current Gain.

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development.

Complementary Memtransistor-Based Multilayer Neural Networks for Online Supervised Learning Through (Anti-)Spike-Timing-Dependent Plasticity.

We propose a complete hardware-based architecture of multilayer neural networks (MNNs), including electronic synapses, neurons, and periphery circuitry to implement supervised learning (SL) algorithm of extended remote supervised method (ReSuMe). In this system, complementary (a pair of n- and p-type) memtransistors (C-MTs) are used as an electrical synapse. By applying the learning rule of spike-timing-dependent plasticity (STDP) to the memtransistor connecting presynaptic neuron to the output one whereas the contrary anti-STDP rule to the other memtransistor connecting presynaptic neuron to the teacher one, extended ReSuMe with multiple layers is realized without the usage of those complicated supervising modules in previous approaches.

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics.

Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.

Enhancing LiAlO synaptic performance by reducing the Schottky barrier height for deep neural network applications.

Although good performance has been reported in shallow neural networks, the application of memristor synapses towards realistic deep neural networks has met more stringent requirements on the synapse properties, particularly the high precision and linearity of the synaptic analog weight tuning. In this study, a LiAlOX memristor synapse was fabricated and optimized to address these demands. By delicately tuning the initial conductance states, 120-level continuously adjustable conductance states were obtained and the nonlinearity factor was substantially reduced from 8.

The mechanism of the modulation of electronic anisotropy in two-dimensional ReS.

Although the anisotropy and strategies for the modulation of the anisotropy in ReS2 have been widely reported, a comprehensive study on the inherent electronic anisotropy of ReS2 is still absent to date; therefore, the mechanism of anisotropy evolution is ambiguous as well. In this study, we have conducted a systematic investigation on the evolution of electronic anisotropy in bilayer ReS2, under the modulation of charge doping levels and temperature. It is found that the adjustability of electronic anisotropy is largely attributed to the angle-dependent scattering from defects or vacancies at a low doping level.

PbSe Quantum Dots Sensitized High-Mobility BiOSe Nanosheets for High-Performance and Broadband Photodetection Beyond 2 μm.

As an emerging two-dimensional semiconductor, BiOSe has recently attracted broad interests in optoelectronic devices for its superior mobility and ambient stability, whereas the diminished photoresponse near its inherent indirect bandgap (0.8 eV or λ = 1550 nm) severely restricted its application in the broad infrared spectra. Here, we report the BiOSe nanosheets based hybrid photodetector for short wavelength infrared detection up to 2 μm PbSe colloidal quantum dots (CQDs) sensitization.

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization.

Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes.

Nanochannel-Based Transport in an Interfacial Memristor Can Emulate the Analog Weight Modulation of Synapses.

By exploiting novel transport phenomena such as ion selectivity at the nanoscale, it has been shown that nanochannel systems can exhibit electrically controllable conductance, suggesting their potential use in neuromorphic devices. However, several critical features of biological synapses, particularly their conductance modulation, which is both memorable and gradual, have rarely been reported in these types of systems due to the fast flow property of typical inorganic electrolytes. In this work, we demonstrate that electrically manipulating the nanochannel conductance can result in nonvolatile conductance tuning capable of mimicking the analog behavior of synapses by introducing a room-temperature ionic liquid (IL) and a KCl solution into the two ends of a nanochannel system.

Doping engineering and functionalization of two-dimensional metal chalcogenides.

Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism.

Van der Waals Coupled Organic Molecules with Monolayer MoS for Fast Response Photodetectors with Gate-Tunable Responsivity.

As a direct-band-gap transition metal dichalcogenide (TMD), atomic thin MoS has attracted extensive attention in photodetection, whereas the hitherto unsolved persistent photoconductance (PPC) from the ungoverned charge trapping in devices has severely hindered their employment. Herein, we demonstrate the realization of ultrafast photoresponse dynamics in monolayer MoS by exploiting a charge transfer interface based on surface-assembled zinc phthalocyanine (ZnPc) molecules. The formed MoS/ZnPc van der Waals interface is found to favorably suppress the PPC phenomenon in MoS by instantly separating photogenerated holes toward the ZnPc molecules, away from the traps in MoS and the dielectric interface.

Hierarchical CuCoO@nickel-cobalt hydroxides core/shell nanoarchitectures for high-performance hybrid supercapacitors.

NiCo(OH) nanosheets coated CuCoO nanoneedles arrays were successfully designed and synthesized on carbon fabric. The core/shell nanoarchitectures directly served as the binder-free electrode with a superior capacity of 295.6mAhg at 1Ag, which still maintained 220mAhg even at the high current density of 40Ag, manifesting their enormous potential in hybrid supercapacitor devices.

A Ternary Solvent Method for Large-Sized Two-Dimensional Perovskites.

Recent reports demonstrate that a two-dimensional (2D) structural characteristic can endow perovskites with both remarkable photoelectric conversion efficiency and high stability, but the synthesis of ultrathin 2D perovskites with large sizes by facile solution methods is still a challenge. Reported herein is the controlled growth of 2D (C H NH ) PbBr perovskites by a chlorobenzene-dimethylformide-acetonitrile ternary solvent method. The critical factors, including solvent volume ratio, crystallization temperature, and solvent polarity on the growth dynamics were systematically studied.

Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires.

Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires.

Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor-Liquid-Solid Route.

Here we show a rational strategy to fabricate single crystalline NiO nanowires via a vapor-liquid-solid (VLS) route, which essentially allows us to tailor the diameter and the spatial position. Our strategy is based on the suppression of the nucleation at vapor-solid (VS) interface, which promotes nucleation only at the liquid-solid (LS) interface. Manipulating both the supplied material fluxes (oxygen and metal) and the growth temperature enables enhancement of the nucleation only at the LS interface.