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Article Abstract
Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable CuSe/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the CuSe matrix of the CuSe/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit (ZT) of 3.3 was attained in the CuSe/5 wt.% SnPbZnSe composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11977218 | PMC |
| http://dx.doi.org/10.1038/s41467-025-58484-0 | DOI Listing |
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