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Interfacing CHNHPbI (MAPbI) with 2D van der Waals materials in lateral photodetectors can suppress the dark current and driving voltage, while the interlayer charge separation also renders slower charge dynamics. In this work, we show that more than one order of magnitude faster photoresponse time can be achieved in MAPbI/MoS lateral photodetectors by locally separating the photocharge generation and recombination through a parallel channel of single-layer MAPbI. Photocurrent () mapping reveals electron diffusion lengths of about 20 μm in single-layer MAPbI and 4 μm in the MAPbI/MoS heterostructure. The illumination-power scaling of and time-resolved photoluminescence studies point to the dominant roles of the heterostructure region in photogeneration and single-layer MAPbI in charge recombination. Our results shed new light on the material design that can concurrently enhance photoresponsivity, reduce driving voltage, and sustain high operation speed, paving the path for developing high-performance lateral photodetectors based on hybrid perovskites.
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http://dx.doi.org/10.1021/acs.nanolett.4c03950 | DOI Listing |
Nano Lett
September 2025
Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Lateral homojunction photodetectors (PDs) offer high responsivity and fast response, yet challenges in tailoring carrier concentrations in two-dimensional transition-metal dichalcogenides (TMDs) have limited their implementation. Here, we demonstrate a high-performance self-powered monolithic lateral p-i-n homojunction PD using multilayer WS. To our knowledge, this study is the first report of achieving tunable, multilevel compensation doping via WO formation using only time-controlled and region-selective ultraviolet (UV)/ozone oxidation.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2025
State Key laboratory of integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, P. R. China.
1D nanowires (broadly including microwires and quantum wires) of metal halide perovskites exhibit several unique properties due to their distinctive morphology, such as enhanced responsivity under weak light, mechanical flexibility, and optical anisotropy. These perovskite nanowires can be readily fabricated into lateral devices as photoconductive photodetectors. Herein, the synthesis of perovskite nanowires and their applications for photodetectors are primarily focused on, providing an overview of the major synthesis strategies for perovskite nanowires (and arrays) since their initial reports, and analyzing how structural design and modification strategies can improve the performance of nanowire-based devices.
View Article and Find Full Text PDFNanoscale
August 2025
School of Physics, and Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, China.
Two-dimensional lateral heterostructures based on transition metal dichalcogenides (TMDs) are promising for optoelectronics due to their layer thickness-dependent properties. Bilayer structures, in particular, offer advantages like enhanced electron mobility and improved stability. However, precisely controlling layer growth in these heterostructures remains a challenge.
View Article and Find Full Text PDFType-II superlattice (T2SL) material systems are emerging as promising alternatives to conventional materials such as InGaAs and HgCdTe for extended short-wavelength infrared (eSWIR) detection, a field experiencing growing demand due to its diverse applications. However, T2SL photodetectors typically suffer from relatively low quantum efficiency. In this study, we demonstrate a significant enhancement in the quantum efficiency of eSWIR T2SL photodetectors through the implementation of a photon-trapping structure.
View Article and Find Full Text PDFSci Adv
August 2025
Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA 92521, USA.
Integrated photodetectors are vital for their high speed, sensitivity, and low power consumption, with photocurrent driven by the photovoltaic and photothermoelectric (PTE) effects. At the nanoscale, these mechanisms overlap, complicating their separate evaluation. We introduce a 3D photocurrent nanoimaging technique to map these effects in a MoS-Au Schottky photodiode, revealing a PTE-dominated region extending hundreds of nanometers from the electrode edge, enabled by weak electrostatic forces in two-dimensional materials.
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