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Organic field-effect transistors with parallel transmission and learning functions are of interest in the development of brain-inspired neuromorphic computing. However, the poor performance and high power consumption are the two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) and organic single crystal. The transistor exhibits a high J of 16.6 mA cm and a high J /J ratio of 9.12 × 10 under an ultralow working voltage of -1 mV. Furthermore, it can successfully simulate the functions of biological synapse under electrical modulation along with consuming only 8.7 aJ of power per spike. It also permits multilevel information decoding modes with a significant gap between the readable time of professionals and nonprofessionals, producing a high signal-to-noise ratio up to 114.15 dB. This work encourages the use of vertical transistors and organic single crystal in decoding information and advances the development of low-power neuromorphic systems.
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http://dx.doi.org/10.1002/adma.202208600 | DOI Listing |
ACS Appl Mater Interfaces
August 2025
School of Materials Science and Engineering, Xiangtan University, Hunan Xiangtan 411105, China.
Two-dimensional (2D) vertical heterojunctions, characterized by atomic-scale van der Waals interfaces that facilitate efficient vertical charge transport, offer a promising architecture for integrating self-powered photodetectors (sense) with neuromorphic synapses (think) to achieve an integrated sense-think functionality. However, the interface-induced opposing electric fields and limited spectral response restrict their development. In this study, we address these limitations through a graphene (Gr)/WSe/Ag vertical heterojunction architecture.
View Article and Find Full Text PDFInnovation (Camb)
June 2025
College of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China.
Ultralow-power non-volatile memristors are key elements in electronics. Generally, power reduction of memristors compromises data retention, a challenge known as the "power-retention dilemma," due to the stochastic formation of conductive dendrites in resistive-switching materials. Here, we report the results of conductive dendrite engineering in single-crystalline two-dimensional (2D) dielectrics in which directional control of filamentary distribution is possible.
View Article and Find Full Text PDFACS Nano
April 2025
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.
Neuromorphic in-memory computing requires an area-efficient architecture for seamless and low-latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET) consisting of a 2D nonferroelectric MoS FET channel stacked on a 2D ferroelectric InSe FET channel. Electrostatic coupling between the ferroelectric and nonferroelectric semiconducting channels results in hysteretic transfer and output characteristics of both FETs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
March 2025
College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
Memtransistors composed of 2D van der Waals (vdW) heterostructures are crucial for constructing artificial synaptic devices and realizing neuromorphic computing. The functional integration containing ultralow power, nonvolatile memory, and biomimetic synaptic behavior endows such devices with broad prospects. Here, we develop an optoelectronic memtransistor based on the WS/InSe vdW heterostructure and realize significant optical and electrical synaptic properties, which can simulate both short-range plasticity (STP) and long-range plasticity (LTP) of biological synapses.
View Article and Find Full Text PDFSmall Methods
April 2025
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
Recent advancements in phase-change memory (PCM) technology have predominantly stemmed from material-level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device-level electrothermal solutions. Thus, the concept of a 3D heater-all-around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed.
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