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2D van der Waals (vdW) ferroelectric materials are emerging as transformative components in modern electronics and neuromorphic computing. The atomic-scale thickness, coupled with robust ferroelectric properties and seamless integration into vdW engineering, offers unprecedented opportunities for the development of high-performance and low-power devices. Notably, 2D ferroelectric devices excel in enabling multistate storage and neuromorphic functionalities in emulating synapses or retinas, positioning them as prime candidates for next-generation in-sensor-and-memory units. Despite ongoing challenges such as scalability, material stability, and uniformity, rapid interdisciplinary advancements and advancing nanofabrication processes are driving the field forward. This review delves into the fundamental principles of 2D ferroelectricity, highlights typical materials, and examines key device structures along with their applications in non-von Neumann architecture development and neuromorphic computing. By providing an in-depth overview, this work underscores the potential of 2D ferroelectric materials to revolutionize the future of electronics.
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http://dx.doi.org/10.1002/smll.202412761 | DOI Listing |
ACS Nano
September 2025
Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Ferroelectric tunnel junctions (FTJs) based on ferroelectric switching and quantum tunneling effects with thickness down to a few unit cells have been explored for applications of two-dimensional (2D) electronic devices in data storage and neural networks. As a key performance indicator, the enhanced tunneling electrosistance (TER) ratio provides a broader dynamic range for precise modulation of synaptic weights, improving the stability and accuracy of neural networks. Herein, we report an observation of pronounced enhancement in the TER ratio by over 4 orders of magnitude through the fabrication of large-scale heterostructures combining bismuth ferrite with two-dimensional Ruddlesden-Popper oxide BiFeO.
View Article and Find Full Text PDFNanoscale Adv
August 2025
Department of Chemistry and Industrial Chemistry & INSTM RU, University of Genoa Via Dodecaneso 31 16146 Genova (GE) Italy
Bismuth ferrite (BiFeO), a perovskite oxide with both ferroelectric and antiferromagnetic properties, has emerged as a promising material for environmental cleanup due to its piezo-photocatalytic activity. The material's ability to degrade organic pollutants, such as azo dyes, under both light irradiation and mechanical stress (ultrasonic waves) offers a dual-action mechanism for efficient wastewater treatment. In this work, we explore the synthesis of BiFeO nanoparticles a simple sol-gel method, followed by characterization of their structural, magnetic, and photocatalytic properties.
View Article and Find Full Text PDFNano Lett
September 2025
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China.
Multijunction photoelectrodes, which generate active photocarriers with sufficient energy to drive unassisted solar-fuel conversion, represent a promising avenue for sustainable energy applications. However, achieving controllable p/n-type doping and high-quality growth remains a challenge for most emerging metal oxide semiconductors. In this study, we demonstrate the creation of in-plane ferroelectric p/n homojunction superstructures in BiFeO (BFO) films, enabling bias-free photoelectrochemical (PEC) reactions.
View Article and Find Full Text PDFAdv Mater
September 2025
Research Center for Crystal Materials, CAS Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, 830011, P. R. China.
The generation of coherent deep-ultraviolet (DUV) radiation via nonlinear frequency conversion remains a major scientific and technological challenge in modern optics. To date, only a very limited number of nonlinear optical (NLO) crystals-such as KBBF, ABF, and quartz-have been experimentally demonstrated to support measurable direct second-harmonic generation (SHG) at wavelengths of 177 nm or shorter. There is a pressing need to develop alternative materials or strategies that enable efficient frequency conversion in the DUV region.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
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