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The generation of current-induced torques through the spin Hall effect in Pt has been key to the development of spintronics. In prototypical ferromagnetic-metal/Pt devices, the characteristic length of the torque generation is known to be about 1 nm due to the short spin diffusion length of Pt. Here, we report the observation of a long-range current-induced torque in Ni/Pt bilayers. We demonstrate that when Ni is used as the ferromagnetic layer, the torque efficiency increases with the Pt thickness, even when it exceeds 10 nm. The torque efficiency is also enhanced by increasing the Ni thickness, providing evidence that the observed torque cannot be attributed to the spin Hall effect in the Pt layer. These findings, coupled with our semirealistic tight-binding calculations of the current-induced torque, suggest the possibility that the observed long-range torque is dominated by the orbital Hall effect in the Pt layer.
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http://dx.doi.org/10.1021/acs.nanolett.3c05102 | DOI Listing |
ACS Nano
September 2025
State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
Functional magnetic multilayers are particularly interesting for enabling many emerging spintronic physics, including spin-orbit torque (SOT), magnetic proximity effect (MPE), and perpendicular magnetic anisotropy (PMA), among many others. A comprehension of these spintronic phenomena is vital for the development of advanced spintronic materials and devices. Here, we investigate the interplay between the MPE and the current-induced SOT switching in the perpendicularly magnetized Pt/[Co/Pd] multilayers (with being the number of repetitions).
View Article and Find Full Text PDFNat Commun
July 2025
Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing, China.
Due to nonrelativistic altermagnetic spin splitting effect (ASSE), altermagnets can generate time-reversal-odd spin current and spin splitting torque (SST) with spin polarization parallel to the Néel vector. Hence the effective manipulation of SST would provide plenty of opportunities for designable spintronic devices. Here, we achieve electrical control of SST in altermagnetic RuO, based on controllable Néel vector of RuO and Néel vector-dependent generation of SST.
View Article and Find Full Text PDFAdv Mater
July 2025
Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany.
High entropy alloys (HEAs) containing multiple elements are emerging as advanced materials with enhanced functionalities. However, their use for spintronic applications remains elusive. Here, it is demonstrated that iridium based HEAs, grown by magnetron sputtering at room temperature, can be used as spin Hall layers.
View Article and Find Full Text PDFNat Commun
May 2025
Institute of Applied Physics, The Hebrew University of Jerusalem, Jerusalem, Israel.
The frustrated FeSn magnet is technologically attractive due to its extreme-temperature skyrmion stability, large topological Hall effect, and current-induced helicity switching attributed to a self-induced spin-torque. Here, we present a current-driven skyrmion resonance technique excited by self-induced spin-torque in FeSn. The dynamics are probed optically in a time-resolved measurement enabling us to distinguish between the excited modes.
View Article and Find Full Text PDFSmall
June 2025
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki, 305-0047, Japan.
MXenes have attracted attention in recent years owing to their 2D layered structures with various functionalities. To open a new application field for MXenes in the realm of electronic devices, such as ultrahigh-integrated magnetic memory, a spin-orbit torque (SOT) bilayer structure with MXene of CrN is developed: substrate//CrN/[Co/Pt]/MgO using the magnetron sputtering technique. Field-free current-induced magnetization switching in the bilayer structure is demonstrated, regardless of the charge current directions with respect to the mirror symmetry lines of CrN crystal.
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