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Functional magnetic multilayers are particularly interesting for enabling many emerging spintronic physics, including spin-orbit torque (SOT), magnetic proximity effect (MPE), and perpendicular magnetic anisotropy (PMA), among many others. A comprehension of these spintronic phenomena is vital for the development of advanced spintronic materials and devices. Here, we investigate the interplay between the MPE and the current-induced SOT switching in the perpendicularly magnetized Pt/[Co/Pd] multilayers (with being the number of repetitions). In particular, we find evidence of the MPE-induced magnetism in the [Co/Pd] multilayers by revealing the boosted saturation magnetization () from 1400 to 2450 emu/cc. By conducting a current-induced SOT switching experiment in these multilayers, we observe a substantial suppression of the SOT switching ratio. The underlying physics is attributed to the rapid spin relaxation of spin current in the MPE-magnetized Pd layer, which prohibits an efficient diffusion of spin currents along the thickness direction of the [Co/Pd] multilayers, as suggested by first-principles calculations. Our work could help to clarify the controversial interplay between the MPE and the SOT switching, which could be useful for designing functional magnetic multilayers for enabling efficient spin-orbitronics.
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http://dx.doi.org/10.1021/acsnano.5c06890 | DOI Listing |
ACS Nano
September 2025
State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
Functional magnetic multilayers are particularly interesting for enabling many emerging spintronic physics, including spin-orbit torque (SOT), magnetic proximity effect (MPE), and perpendicular magnetic anisotropy (PMA), among many others. A comprehension of these spintronic phenomena is vital for the development of advanced spintronic materials and devices. Here, we investigate the interplay between the MPE and the current-induced SOT switching in the perpendicularly magnetized Pt/[Co/Pd] multilayers (with being the number of repetitions).
View Article and Find Full Text PDFAdv Mater
August 2025
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300044, Taiwan.
Antiferromagnets (AFMs) offer exceptional promise for next-generation spintronic devices due to their ultrafast dynamics and resilience to external perturbations. However, while single-crystalline AFMs have been capable of being electrically manipulated, controlling polycrystalline AFM spins remains a major challenge due to their aperiodic nature. In this work, a Néel tensor is introduced as a rank-two symmetric tensor that statistically captures the spin correlations in polycrystalline AFMs, a fundamental departure from the conventional Néel vector approach.
View Article and Find Full Text PDFSci Adv
August 2025
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, USA.
Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature.
View Article and Find Full Text PDFAdv Mater
August 2025
State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China.
Electrical manipulation of magnetism in 2D van der Waals (vdW) ferromagnet (FM) holds promise for next-generation spintronic devices. Investigating field-free, ultrafast switching at room temperature in wafer-scalable vdW heterostructures can advance the development of faster memories and enhance the understanding of magnetization switching mechanisms in 2D FMs. In this study, field-free, room temperature spin-orbit torque (SOT) switching at subnanosecond timescales in a wafer-scalable FeGaTe/Pt heterostructure by epitaxial growth engineering is demonstrated.
View Article and Find Full Text PDFClin Microbiol Infect
July 2025
Department of Medical and Surgical Sciences, Alma Mater Studiorum, University of Bologna, Bologna, Italy; Infectious Diseases Unit, Department of Integrated Infectious Risk Management, IRCCS Azienda Ospedaliero-Universitaria di Bologna, Italy. Electronic address:
Background: The true burden of HHV-8 in solid organ transplant (SOT) setting remains difficult to quantify and there are several uncertainties about the best prevention and management of HHV-8 related complications.
Objectives: To describe epidemiology and impact on outcome of HHV-8 related diseases in patients undergoing SOT, we reviewed all episodes diagnosed at our hospital over 8-year period and performed a narrative systematic literature review.
Sources: A search on PubMed, Scopus and Cochrane Library, according to Preferred Reporting Items for Systematic Review and Meta-Analyses guidelines, was done.