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A terahertz band (0.1-10 THz) has the characteristics of rich spectrum resources, high transmission speed, strong penetration, and clear directionality. However, the terahertz signal will suffer serious attenuation and absorption during transmission. Therefore, a terahertz antenna with high gain, high efficiency, and wide bandwidth is an indispensable key component of terahertz wireless systems and has become a research hotspot in the field of antennas. In this paper, a high-gain broadband antenna is presented for terahertz applications. The antenna is a three-layer structure, fed by a grounded coplanar waveguide (GCPW), using polytetrafluoroethylene (PTFE) material as the dielectric substrate, and the metal through-hole of the dielectric substrate forms a substrate-integrated waveguide (SIW) structure. The metal fence structure is introduced to reduce the coupling effect between the radiation patches and increase the radiation bandwidth and gain. The center frequency is 0.6366 THz, the operating bandwidth is 0.61-0.68 THz, the minimum value of the voltage standing wave ratio (VSWR) is 1.00158, and the peak gain is 13.14 dBi. In addition, the performance of the designed antenna with a different isolation structure, the length of the connection line, the height of the substrate, the radius of the through-hole, and the thickness of the patch is also studied.
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http://dx.doi.org/10.3390/mi15030407 | DOI Listing |
Phys Rev Lett
August 2025
University of Delaware, Department of Physics and Astronomy, Newark, Delaware 19716, USA.
Ultrafast light-driven strongly correlated antiferromagnetic insulators, such as prototypical NiO with a large Mott energy gap ≃4 eV, have recently attracted experimental attention using photons of both subgap [H. Qiu et al., Nat.
View Article and Find Full Text PDFMicrosyst Nanoeng
September 2025
Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin University, Tianjin, 300072, China.
Terahertz communication systems demand versatile devices capable of simultaneously controlling propagating waves and surface plasmon polaritons (SPPs) in far-field (FF) and near-field (NF) channels, yet existing solutions are constrained by volatile operation, single-function limitations, and the inability to integrate NF and FF functionalities. Here, we present a nonvolatile reconfigurable terahertz metasurface platform leveraging the phase-change material GeSbTe(GST) to achieve on-demand dual-channel modulation-a first in the terahertz regime. By exploiting the stark conductivity contrast of GST between amorphous and crystalline states, our design enables energy-efficient switching between NF-SPP manipulation and FF-wavefront engineering without requiring continuous power input.
View Article and Find Full Text PDFDalton Trans
September 2025
School of Mathematics and Science, Southwest University of Science and Technology, Mianyang 621010, China.
In this paper, we design and study a temperature-controlled switchable terahertz perfect absorber based on vanadium dioxide (VO), which shows excellent multi-band performance, high sensitivity and intelligent thermal management. The device consists of four layers in a metal-dielectric composite structure, which are a metal reflection layer, silicon dielectric layer, VO phase change layer and top metal pattern layer from bottom to top. The simulation results show that when VO is in the low-temperature insulation state, the absorption rate of the device is as high as 99.
View Article and Find Full Text PDFACS Nano
September 2025
College of Physics, Donghua University, Shanghai 201620, China.
Broadband anisotropic photodetectors show great promise for polarization-sensitive imaging and multispectral optoelectronic systems yet face critical challenges in material anisotropy modulation and broadband sensitivity. Weyl semimetals exhibit giant optical anisotropy and tunable heterojunction band alignment, enabling high-performance anisotropic photodetection. Herein, ultrabroadband PDs based on the NbNiTe (niobium nickel telluride), enabled by antenna integration and heterostructure engineering, achieve high sensitivity from visible to Terahertz (THz).
View Article and Find Full Text PDFNano Lett
September 2025
Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
Active manipulation of terahertz (THz) waves is important for future optoelectronic applications, but most approaches rely on volatile or slow actuation, limiting efficiency and stability. Here, we report a nonvolatile, low-voltage tunable THz transmission device based on electrochemical modulation of a conductive polymer thin film integrated with metallic nanoresonators. A thin film of PEDOT:PSS, deposited via a single-step spin-coating process onto the nanoresonator array, enables efficient modulation of resonance-enhanced THz transmission with a gate voltage of less than 1 V.
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