Ultrabroadband Photosensitivity and Frequency-Mixing in Anisotropic Weyl Semimetal NbNiTe.

Broadband anisotropic photodetectors show great promise for polarization-sensitive imaging and multispectral optoelectronic systems yet face critical challenges in material anisotropy modulation and broadband sensitivity. Weyl semimetals exhibit giant optical anisotropy and tunable heterojunction band alignment, enabling high-performance anisotropic photodetection. Herein, ultrabroadband PDs based on the NbNiTe (niobium nickel telluride), enabled by antenna integration and heterostructure engineering, achieve high sensitivity from visible to Terahertz (THz).

Tunable Electronic Bandgaps and Optical and Magnetic Properties in Antiferromagnetic MPS/GaN (M = Mn, Fe, and Ni) Heterobilayers.

Research on two dimensional (2D) antiferromagnetic materials and heterobilayers is gaining prominence in spintronics. This study focuses on MPS monolayers and their van der Waals heterobilayers with GaN monolayers. We systematically investigated the structural stability, electronic properties, and magnetic characteristics of MPS (M = Mn, Fe, and Ni) monolayers via first-principles calculations, and explored their potential applications in optoelectronics and spintronics.

Reconfigurable terahertz optoelectronic logic through charge-density-wave phase engineering.

Charge density waves, manifestations of strongly correlated electronic states in low-dimensional materials, exhibit collective quantum phenomena that enable phase-coherent electronic manipulation. Conventional approaches face limitations in integrating sensing and computing functions, particularly at terahertz frequencies where traditional semiconductors struggle. We achieve deterministic switching between resistive and dissipationless states in 1T-TaS through synergistic thermal, electrical, and optical modulation of metastable charge-density-wave configurations.

Multispectral Integrated Black Arsenene Phototransistors for High-Resolution Imaging and Enhanced Secure Communication.

The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, and medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents and the necessity for cryogenic cooling, which limit their effectiveness in detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room temperature based on two-dimensional black arsenene (b-As) nanosheets.

Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication.

The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D TaNiSe and the topological insulator BiSe, where the configuration enables polarization-sensitive, wide-spectral-range photodetection.

Ultrasensitive and Self-Powered Terahertz Detection Driven by Nodal-Line Dirac Fermions and Van der Waals Architecture.

Terahertz detection has been highly sought to open a range of cutting-edge applications in biomedical, high-speed communications, astronomy, security screening, and military surveillance. Nonetheless, these ideal prospects are hindered by the difficulties in photodetection featuring self-powered operation at room temperature. Here, this challenge is addressed for the first time by synthesizing the high-quality ZrGeSe with extraordinary quantum properties of Dirac nodal-line semimetal.