Dynamic dual-mode terahertz device with nonvolatile switching for integrated on-chip and free-space applications.

Microsyst Nanoeng

Center for Terahertz Waves, College of Precision Instrument and Optoelectronics Engineering, and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin University, Tianjin, 300072, China.

Published: September 2025


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Article Abstract

Terahertz communication systems demand versatile devices capable of simultaneously controlling propagating waves and surface plasmon polaritons (SPPs) in far-field (FF) and near-field (NF) channels, yet existing solutions are constrained by volatile operation, single-function limitations, and the inability to integrate NF and FF functionalities. Here, we present a nonvolatile reconfigurable terahertz metasurface platform leveraging the phase-change material GeSbTe(GST) to achieve on-demand dual-channel modulation-a first in the terahertz regime. By exploiting the stark conductivity contrast of GST between amorphous and crystalline states, our design enables energy-efficient switching between NF-SPP manipulation and FF-wavefront engineering without requiring continuous power input. Experimental validation demonstrates two devices: Device I dynamically transitions between NF SPP focusing and FF vortex beam generation, while Device II toggles NF anomalous SPP focusing and FF holographic imaging. The metasurface uniquely integrates simultaneous amplitude/phase control for SPPs and free-space waves, overcoming the single-channel limitations of prior works. With reversible switching cycles and nonvolatile state retention (>10 years), this platform bridges the gap between on-chip plasmonics and free-space terahertz technologies, offering transformative potential for applications in 6 G communication, encrypted data storage, and multifunctional metasensors.

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http://dx.doi.org/10.1038/s41378-025-01020-3DOI Listing

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Dynamic dual-mode terahertz device with nonvolatile switching for integrated on-chip and free-space applications.

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Terahertz communication systems demand versatile devices capable of simultaneously controlling propagating waves and surface plasmon polaritons (SPPs) in far-field (FF) and near-field (NF) channels, yet existing solutions are constrained by volatile operation, single-function limitations, and the inability to integrate NF and FF functionalities. Here, we present a nonvolatile reconfigurable terahertz metasurface platform leveraging the phase-change material GeSbTe(GST) to achieve on-demand dual-channel modulation-a first in the terahertz regime. By exploiting the stark conductivity contrast of GST between amorphous and crystalline states, our design enables energy-efficient switching between NF-SPP manipulation and FF-wavefront engineering without requiring continuous power input.

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