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Arsenic contamination is a major environmental issue, as it may lead to serious health hazard. The reduced trivalent form of inorganic arsenic, arsenite, is in general more toxic to plants compared with the fully oxidized pentavalent arsenate. The uptake of arsenite in plants has been shown to be mediated through a large subfamily of plant aquaglyceroporins, nodulin 26-like intrinsic proteins (NIPs). However, the efflux mechanisms, as well as the mechanism of arsenite-induced root growth inhibition, remain poorly understood. Using molecular physiology, synchrotron imaging, and root transport assay approaches, we show that the cellular transport of trivalent arsenicals in is strongly modulated by PIN FORMED 2 (PIN2) auxin efflux transporter. Root transport assay using radioactive arsenite, X-ray fluorescence imaging (XFI) coupled with X-ray absorption spectroscopy (XAS), and inductively coupled plasma mass spectrometry analysis revealed that plants accumulate higher concentrations of arsenite in roots compared with the wild-type. At the cellular level, arsenite specifically targets intracellular sorting of PIN2 and thereby alters the cellular auxin homeostasis. Consistently, loss of PIN2 function results in arsenite hypersensitivity in roots. XFI coupled with XAS further revealed that loss of PIN2 function results in specific accumulation of arsenical species, but not the other metals such as iron, zinc, or calcium in the root tip. Collectively, these results suggest that PIN2 likely functions as an arsenite efflux transporter for the distribution of arsenical species .
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http://dx.doi.org/10.1016/j.xplc.2019.100009 | DOI Listing |
Inorg Chem
September 2025
Boston University, Chemistry Department, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States.
Previously published (NMe)[V(O)(μ-O)(pin)], has been shown to aerobically catalyze the oxidation of benzylic and allylic alcohols under mild conditions. Herein, we report syntheses of [V(O)(μ-O)(pin)] trimers, which are also active in OAD catalysis. Trimer formation requires an ammonium cation with at least two hydrogen atoms per cation (e.
View Article and Find Full Text PDFSmall Methods
September 2025
Green and Sustainable Materials R&D Department, Korea Institute of Industrial Technology (KITECH), Cheonan, Chungcheongnam-do, 31056, Republic of Korea.
NiO is widely used for hole-transporting layers in p-i-n-type perovskite solar cells (PSCs) due to its stability, wide bandgap (≈3.5 eV), and solution processability. However, during solution processing, oxygen exposure can induce non-stoichiometry, forming Ni.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
School of Integrated Circuits, Tsinghua University, Beijing 100084, China.
In this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC, silicon has a smaller band energy, which results in a lower built-in potential for the junction formed by P+ polysilicon and a 4N-SiC N-drift region. A trench P+ polysilicon is introduced in the source side, forming a heterojunction with the N-drift region, and this heterojunction is unipolar and connected in parallel with the body PiN diode.
View Article and Find Full Text PDFAdv Mater
August 2025
School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Perovskite solar cells (PSCs) suffer from severe nonradiative recombination-induced photovoltage loss, limiting the device overall performance. To address this key issue, an efficient strategy via a dual-site anchoring bridge is developed to engineer the heterointerface between perovskite and PCBM electron transport layer. The resulting reinforced and homogeneous passivation by forming strong dual-site P─O─Pb covalent bonds, effectively decreases perovskite surface defect density.
View Article and Find Full Text PDFNanomaterials (Basel)
August 2025
State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Laser Spectroscopy, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China.
Metal halide perovskites have appeared as a promising semiconductor for high-efficiency and low-cost photovoltaic technologies. However, their performance and long-term stability are dramatically constrained by defects at the surface and grain boundaries of polycrystalline perovskite films formed during the processing. Herein, we propose a defect-targeted passivation strategy using 2-chlorocinnamic acid (2-Cl) to simultaneously enhance the efficiency and stability of perovskite solar cells (PSCs).
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