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Article Abstract
In this paper, a systematic study on performance degradation of a 0.18 μm BCD-process DCAP (Direct connection to the output CAPacitor) power chip under a total-dose radiation environment is carried out. The effects of total-dose radiation on the electrical characteristics of an MOS device are analyzed through device-level simulation. Based on the simulation results, a total-dose fault injection model is established and applied to a circuit-level simulation of the DCAP power chip. Our simulation modeling and analysis results show that total-dose radiation degrades output voltage accuracy and switching frequency, to which the bandgap reference circuit is identified as the most sensitive module. The findings presented in this paper provide theoretical support for total-dose radiation hardening designs for the DCAP power chip.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12388713 | PMC |
| http://dx.doi.org/10.3390/mi16080917 | DOI Listing |
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