Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
This study presents transistor-level simulation results for a novel memristor emulator circuit. The design incorporates an inverter and a current-mode-controlled operational transconductance amplifier to stabilize the output voltage. Transient performance is evaluated across a 20 MHz to 100 MHz frequency range. Simulations using 0.18 μm TSMC technology confirm the circuit's functionality, demonstrating a power consumption of 0.1 mW at a 1.2 V supply. The memristor model's reliability is verified through corner simulations, along with Monte Carlo and temperature variation tests. Furthermore, the emulator is applied in a Memristive Integrate-and-Fire neuron circuit, a CMOS-based system that replicates biological neuron behavior for spike generation, enabling ultra-low-power computing and advanced processing in retinal prosthesis applications.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12388486 | PMC |
| http://dx.doi.org/10.3390/mi16080848 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Bioinspired neuromorphic memristor with logical operation for precision sperm detection in seminiferous tubules.
Mater Today Bio
October 2025
Department of Reproductive Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China.
Clinically, even in patients diagnosed with non-obstructive azoospermia, spermatogenesis may be present in some seminiferous tubules, which gives the patient hope of having biological offspring of his own. However, there is still a blank for high-precision detection technologies to support accurate diagnosis and effective treatment. In this work, we successfully developed a minimally invasive fine needle detection memristive device that features a structure composed of Ag/CH-MnO/FTO by utilizes the organic-inorganic heterojunction as functional layer.
View Article and Find Full Text PDFA ferroelectrics/oxide heterojunction based memristor for artificial synapse and neuromorphic computing.
J Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
View Article and Find Full Text PDFEffects of non-volatility of memristor on the synchronizability of memristor-coupled heterogeneous neurons.
Chaos
September 2025
School of Science, Jiangxi University of Science and Technology, Ganzhou 341000, China.
Synaptic plasticity is of great significance for understanding the leaning and memory processes in different brain regions since it determines the synchronized firing activities of neurons. A volatility-switchable memristor-coupled heterogeneous neuron model is proposed to explore the effects of the synaptic plasticity on the synchronous dynamics of coupled neurons in different brain regions. With the increment of the non-volatility, the critical coupling strength of synchronization between two heterogeneous neurons decreases in a power-law relationship with the character parameter of the memristor.
View Article and Find Full Text PDFDesign of a Current-Mode OTA-Based Memristor Emulator for Neuromorphic Medical Application.
Micromachines (Basel)
July 2025
Systems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineering School of Sfax, University of Sfax, Sfax 3038, Tunisia.
This study presents transistor-level simulation results for a novel memristor emulator circuit. The design incorporates an inverter and a current-mode-controlled operational transconductance amplifier to stabilize the output voltage. Transient performance is evaluated across a 20 MHz to 100 MHz frequency range.
View Article and Find Full Text PDFAn ion-electronic hybrid artificial neuron with a widely tunable frequency.
Nat Commun
August 2025
State Key Laboratory of Mechanics and Control for Aerospace Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
Biological nervous systems rely on distinct spiking frequencies across a wide range for perceiving, transmitting, processing, and executing information. Replicating this frequency range in an artificial neuron would facilitate the emulation of biosignal diversity but it remains challenging. Here, we develop an ion-electronic hybrid artificial neuron by compactly integrating a nonlinear electrochemical element with a solid-state memristor.
View Article and Find Full Text PDF