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Article Abstract
Deep-ultraviolet photodetectors have promising applications in both civil and military fields, due to the advantage of effective light response without an external power supply. In this work, we proposed a self-powered deep-ultraviolet photodetector based on a p-CsCuI/n-ZnGaO heterojunction fabricated by a pulsed laser deposition technique. Under 260 nm illumination and 0 V bias, the photodetector exhibited a maximum responsivity and specific detectivity of 1.2 mA/W and 1.65 × 10 Jones, respectively. The response and recovery times were 410 ms and 114 ms, respectively. The photodetector exhibited self-powered characteristics and detection capabilities within the wavelength range from 255 to 330 nm, demonstrating its potential for advancing self-powered deep-ultraviolet photodetector applications.
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