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Ceramic circuit boards (CCBs) have been extensively utilized in 5G communications, aerospace, and artificial intelligence due to their excellent thermal conductivity and electrical performance. However, due to the limitation of manufacturing technologies, the existing CCBs can not take into account both the resolution and thickness, which restricts the miniaturization and high power of the resulting electronics. Herein, we report a standing-CCBs (S-CCBs) with both high-resolution and high aspect-ratio fabricated via sacrificial coating-assisted micro-3D printing. Benefiting from this technique, S-CCBs can be easily printed as a tall and thin-walled structure without landslides and sintered to be highly conductive wire with an overall shrinkage on the rough ceramic substrates, achieving a line width of 7 µm and aspect-ratio of 2.3 on various ceramic substrates (AlO, AlN, and ZrO) with conductivity of 5.1 × 10 S m. Such circuits also possess environmental compatibility under mechanical tests (1000 adhesion test and scratch test) and harsh environments (500 °C aging for 500 h and chemical attack for 500 h). The proposed technique free from traditional lithography, etching, and plating processes opens up a promising strategy of implementing both high-density integration and large current-carrying capacity.
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http://dx.doi.org/10.1038/s41467-025-60408-x | DOI Listing |
Sci Adv
September 2025
College of Materials Science and Engineering, Sichuan University, Chengdu, China.
The pyroelectric effect plays a critical role in thermal imaging and energy harvesting. Despite extensive efforts to enhance performance through doping and composite engineering, the mechanisms underlying defect dipole coupling with phase structures remain poorly understood, impeding the advancement of defect-engineered symmetry modulation. Here, we report an abnormal pyroelectric phenomenon where the pyroelectric coefficient () increases notably when poling temperature exceeds the orthorhombic-to-tetragonal phase transition temperature () in potassium sodium niobate ceramics.
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2025
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Digital light processing (DLP) presents a promising approach for fabricating intricately designed piezoelectric components, which are essential for developing high-sensitivity piezoelectric sensor systems. However, the inherent layer-by-layer stacking nature of DLP induces interlayer cracking in printed ceramics, which severely deteriorates their performance. This work introduces an innovative interfacial engineering strategy to print superlattice components with exceptional piezoelectric performance.
View Article and Find Full Text PDFAdv Mater
August 2025
State Key Laboratory of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
2D semiconductors open new avenues in the post-Moore era for semiconductor technologies immune from the short-channel effect due to their atomic-scale thicknesses and dangling-bond-free surfaces. However, it still remains a big challenge to obtain large-area and high-quality monolayer p-type semiconductors so far. Herein, a controlled nucleation is realized by tuning the evaporation areas of Se precursors during the p-type WSe growth.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, we employ ferroelectric KNaNbO (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures.
View Article and Find Full Text PDFSmall
August 2025
Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, State Key Laboratory of Photovoltaic Materials and Cells, Nankai University, Tianjin, 300350, P. R. China.
Sputtered nickel oxide (NiO) is a promising material for hole transport layers (HTLs) in industrializing perovskite solar cells (PSCs) due to its scalable and conformal growth. However, its low conductivity and interfacial instability limit device performance. Herein, high-quality undoped NiO (DC-N) HTLs are developed fabricated via direct current (DC) reactive sputtering (Ni target) coupled with low-temperature (≤ 200 °C) air annealing.
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