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Article Abstract
2D semiconductors open new avenues in the post-Moore era for semiconductor technologies immune from the short-channel effect due to their atomic-scale thicknesses and dangling-bond-free surfaces. However, it still remains a big challenge to obtain large-area and high-quality monolayer p-type semiconductors so far. Herein, a controlled nucleation is realized by tuning the evaporation areas of Se precursors during the p-type WSe growth. By optimizing the nucleation density, centimeter-scale uniform monolayer WSe and Nb-incorporated WSe films are synthesized. The field effect transistor array based on WSe film exhibits p-type behavior with hole mobilities of 34 ± 17 cm V s and an average on/off ratio of 4 × 10, which can be further improved by Nb incorporation with much higher hole mobility of 48 ± 16 cm V s with an average on/off ratio of ≈10. The work paves the way for synthesizing large-scale uniform 2D p-type semiconductors for electrical devices and integrated circuits.
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| http://dx.doi.org/10.1002/adma.202500886 | DOI Listing |
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