Mixed binary supporting electrolyte approach for enhanced synaptic functionality in one-shot integrable electropolymerized synaptic transistors.

Mater Horiz

SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea.

Published: July 2025


Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

The limitations of traditional von Neumann architectures have driven interest in organic mixed ionic-electronic conductors (OMIECs) for integrating memory and computation. Organic electrochemical synaptic transistors (OESTs) are particularly promising for emulating biological synaptic behaviors because they offer low power consumption, flexibility, and scalability. One-shot integrable electropolymerization (OSIEP) has emerged as a promising approach for fabricating OESTs owing to its simplicity and integrative capabilities. However, OSIEP-fabricated devices often exhibit inferior memory characteristics, largely due to suboptimal control of channel crystallinity-a key factor influencing memory retention. In this study, we addressed this challenge by fabricating poly(3,4-ethylenedioxythiphene) (PEDOT)-based OESTs using a mixed binary supporting electrolyte the OSIEP method. A binary system comprising tetrabutylammonium tetrafluoroborate (BF) and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (TFSI) was adopted to balance crystallinity and ionic conductivity. PEDOT:Blend films achieved enhanced synaptic functionality by combining the high de-doping efficiency and charge transport of PEDOT:BF with the superior molecular orientation of PEDOT:TFSI. This synergistic approach significantly improved the long-term depression/potentiation characteristics and prolonged memory retention. PEDOT:Blend-based synaptic transistors achieved a recognition accuracy of 95.58% on the MNIST dataset, surpassing devices fabricated with single electrolytes. These findings highlight a scalable strategy for tuning the synaptic properties in OMIEC-based devices, thereby advancing their potential for neuromorphic computing applications.

Download full-text PDF

Source
http://dx.doi.org/10.1039/d5mh00348bDOI Listing

Publication Analysis

Top Keywords

synaptic transistors
12
mixed binary
8
binary supporting
8
supporting electrolyte
8
enhanced synaptic
8
synaptic functionality
8
one-shot integrable
8
memory retention
8
synaptic
7
electrolyte approach
4

Similar Publications

A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ alternating layers of AlO, TiO, and SiO to optimize the gate-oxide stack. Each GI material is strategically selected for complementary functionalities: AlO improves the interfacial quality at both the GI/semiconductor and GI/metal interfaces, thereby enhancing device stability and performance; TiO increases the overall dielectric constant; and SiO suppresses leakage current by serving as a high-energy barrier between AlO and TiO.

View Article and Find Full Text PDF

Growing interest in organic electrochemical synaptic transistors (OECT-STrs) based on conjugated polymer mixed ionic-electronic conductors (CP-MIECs) has intensified, leading to the need to establish clear design rules and fundamentally understand the distinct roles of crystalline and amorphous domains in the electrochemical doping behavior of CP-MIEC films. Here, OECT-STrs based on regioregular-block-regiorandom (regioblock) conjugated copolymers with precisely controlled crystallinity are demonstrated. The crystallinity of a poly(3-hexylthiophene) regioblock copolymer is systematically tuned by varying the fraction of regiorandom blocks without altering the geometry or orientation of the crystalline phase.

View Article and Find Full Text PDF

Nonvolatile Operation of Bioinspired Spectral-Adaptive Transistor with Ferroelectric-Photosensitive Gate.

ACS Nano

August 2025

School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University, Xinxiang 453007, China.

Current spectral adaptation of vision systems is volatile operation that relies on cascading optical filters and electronic components, resulting in bulky architectures and high energy consumption. Inspired by the spectrally tunable vision of a migratory fish, we propose a spectral-adaptive nonvolatile-operating device based on a two-dimensional MoS channel with CuInPS (CIPS) gate, in which the ferroelectric-photosensitive synergy of CIPS routes the carriers, emulating retina's adaptive feedback. The ferroelectric polarization dynamically tunes spectral synaptic plasticity and keeps the high spectral suppression ratio up to 10 without constant gate voltage or optical filters, which enhances target spectral feature extraction and elevates image recognition accuracy in cluttered scenes from 71.

View Article and Find Full Text PDF

Neuromorphic systems that emulate the information transmission of biological neural networks face challenges in their integration owing to the disparate features of neuron- and synapse-mimicking devices, leading to complex and inefficient system architectures. Herein, the study proposes a steep-switching nonvolatile field-effect transistor leveraging a CuInPS/h-BN/WSe heterostructure to enable reconfigurable neuron- and synapse-modes by electrostatically modulating the carrier density of the channel to control its Fermi level, thereby facilitating leaky-integrate-and-fire (LiF) neuron operation. In addition, an additional ferroelectric-gating effect enhances the chemical potential of the channel through interactions between ferroelectric dipoles and channel carriers, allowing LiF operation at a reduced operating bias condition.

View Article and Find Full Text PDF

As artificial intelligence continues to evolve, neuromorphic technologies, which emulate biological neural networks, are increasingly seen as a promising direction. Two-dimensional materials are considered promising for neuromorphic applications due to their tunable electrical and optoelectronic properties. In this work, a back-gated tin disulfide (SnS) field-effect transistor (FET) is electrically and optoelectronically characterized at different temperatures (80, 295, and 380 K), pressures (ambient and 10 mbar), and illumination conditions (dark and laser light from 420 to 800 nm).

View Article and Find Full Text PDF