SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance.

In this article, a novel double-trench SiC MOSFET with an integrated MOS-channel diode (MCD) is proposed and analyzed through TCAD simulations. The MCD incorporates a short channel, where the channel length can be adjusted by modifying the recess depth. Owing to the drain-induced barrier-lowering (DIBL) effect, a low potential barrier is created for electrons flowing from the JFET region to the N+ source region. This effectively eliminates the bipolar degradation of the parasitic body p-i-n diode and reduces the cut-in voltage Von by 69.2%. Additionally, the breakdown voltage (BV) remains nearly unchanged. The reduction in the p-well region alleviates the JFET effect, successfully lowering the specific on-resistance Ron,sp, making the channel easier to turn on, and reducing the threshold voltage (Vth). However, the increase in the gate charge Qg results in a slight rise in the switching loss.