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Article Abstract
The combination of antiferromagnetism and topological properties in MnX (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of MnGa thin films on SiO(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick MnGa films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) MnGa(002) phase from the relatively thin MnGa films after annealing at 773 K. The investigation of the growth mechanism of MnGa polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.
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| http://dx.doi.org/10.1088/1361-648X/ad81a4 | DOI Listing |
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