Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
Halide perovskite-based resistive switching memory (memristor) has potential in an artificial synapse. However, an abrupt switch behavior observed for a formamidinium lead triiodide (FAPbI)-based memristor is undesirable for an artificial synapse. Here, we report on the δ-FAPbI/atomic-layer-deposited (ALD)-SnO bilayer memristor for gradual analogue resistive switching. In comparison to a single-layer δ-FAPbI memristor, the heterojunction δ-FAPbI/ALD-SnO bilayer effectively reduces the current level in the high-resistance state. The analog resistive switching characteristics of δ-FAPbI/ALD-SnO demonstrate exceptional linearity and potentiation/depression performance, resembling an artificial synapse for neuromorphic computing. The nonlinearity of long-term potentiation and long-term depression is notably decreased from 12.26 to 0.60 and from -8.79 to -3.47, respectively. Moreover, the δ-FAPbI/ALD-SnO bilayer achieves a recognition rate of ≤94.04% based on the modified National Institute of Standards and Technology database (MNIST), establishing its potential in an efficient artificial synapse.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.nanolett.4c00253 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Near-infrared Artificial Synapse Based on a Pristine InGaAs Nanowire Synaptic Transistor.
Nanotechnology
September 2025
Beijing University of Technology, Key Laboratory of Optoelectronics Technology, School of Information Science and Technology., Beijing, 100124, CHINA.
The rapid advancements in the field of artificial intelligence have intensified the urgent need for low-power, high-speed artificial synaptic devices. Here, a near-infrared (NIR) artificial synaptic device is successfully realized based on pristine InGaAs nanowires (NWs), which achieves a paired-pulse facilitation (PPF) of up to 119%. Additionally, a postsynaptic current (PSC) in memory storage behavior has been implemented by applying different voltage pulses along with continuous illumination of 1064 nm NIR light due to the memristor characteristics of the device.
View Article and Find Full Text PDFEnhanced Giant Ferroelectric Tunneling Electroresistance in 2D Ruddlesden-Popper Oxides.
ACS Nano
September 2025
Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Ferroelectric tunnel junctions (FTJs) based on ferroelectric switching and quantum tunneling effects with thickness down to a few unit cells have been explored for applications of two-dimensional (2D) electronic devices in data storage and neural networks. As a key performance indicator, the enhanced tunneling electrosistance (TER) ratio provides a broader dynamic range for precise modulation of synaptic weights, improving the stability and accuracy of neural networks. Herein, we report an observation of pronounced enhancement in the TER ratio by over 4 orders of magnitude through the fabrication of large-scale heterostructures combining bismuth ferrite with two-dimensional Ruddlesden-Popper oxide BiFeO.
View Article and Find Full Text PDFBioinspired neuromorphic memristor with logical operation for precision sperm detection in seminiferous tubules.
Mater Today Bio
October 2025
Department of Reproductive Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China.
Clinically, even in patients diagnosed with non-obstructive azoospermia, spermatogenesis may be present in some seminiferous tubules, which gives the patient hope of having biological offspring of his own. However, there is still a blank for high-precision detection technologies to support accurate diagnosis and effective treatment. In this work, we successfully developed a minimally invasive fine needle detection memristive device that features a structure composed of Ag/CH-MnO/FTO by utilizes the organic-inorganic heterojunction as functional layer.
View Article and Find Full Text PDFA ferroelectrics/oxide heterojunction based memristor for artificial synapse and neuromorphic computing.
J Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
View Article and Find Full Text PDFAnisotropic Optoelectronic Synapses in 2D NbGeTe for Direction-Programmable Neuromorphic Perception and Decision-Making.
Adv Mater
September 2025
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China.
Neuromorphic computing presents a promising solution for the von Neumann bottleneck, enabling energy-efficient and intelligent sensing platforms. Although 2D materials are ideal for bioinspired neuromorphic devices, achieving multifunctional synaptic operations with simple configurations and linear weight updates remains challenging. Inspired by biological axons, the in-plane anisotropy of 2D NbGeTe is exploited to develop dual electronic-optical synaptic devices.
View Article and Find Full Text PDF