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I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn, Mn and Cu) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.
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http://dx.doi.org/10.3390/ma16145039 | DOI Listing |
Materials (Basel)
March 2025
Department of Materials Science and Engineering, College of Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea.
Eskebornite (CuFeSe) is a I-III-VI semiconductor with a tetragonal crystal structure, known for its intriguing electrical and magnetic properties. However, experimental studies on this material remain scarce. In this study, Ni-doped eskebornite, CuNiFeSe (x = 0.
View Article and Find Full Text PDFACS Nano
March 2025
School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, P. R. China.
Ternary I-III-VI semiconductors are useful light-capture materials, but the presence of a special donor-acceptor pair complicates the dynamics of carriers in the photocatalytic process, and the combined effect of multiple types of defects makes it difficult to study the single type of defect on carrier dynamics. Here, excess inorganic S ligand is used to passivate the surface defects of the nonstoichiometric ratio Ag-In-Zn-S quantum dots (QDs), which enables the systematic investigation of the effects of high-density donor-acceptor pairs on the carrier separation and transfer path during photocatalysis. The results show that the donor-acceptor pair defects in quantum dots can effectively separate the carriers because the defects generated by the donor or acceptor can effectively "store" the carriers at the fixed energy level and provide an additional path for the transfer of the carriers.
View Article and Find Full Text PDFChemphyschem
March 2025
College of Design and Manufacturing Technology, Muroran Institute of Technology, Mizumoto-cho, Muroran, 050-8585, Japan.
Highly emissive Zn-Ag-In-S nanocrystals have attracted attention as derivatives of I-III-VI-type nanocrystals without the use of toxic elements. The wide tunability of their luminescence wavelengths is attributed to the controllable bandgap of the solid solution between ZnS and AgInS. However, enhancement of the photoluminescence quantum yield (PL-QY) depending on the chemical composition has not been elucidated.
View Article and Find Full Text PDFSpectrochim Acta A Mol Biomol Spectrosc
February 2025
College of Materials and New Energy, Chongqing University of Science and Technology, Chongqing 401331, PR China. Electronic address:
The I-III-VI QDs Ag-In-S (AIS) exhibits excellent properties in photocatalysis because of the adjustable band gap, wide light absorption range, and multiple active sites. Introducing homologous or heterogeneous ions not only derives the composition into quaternary/ quinary quantum dots but also generates new sulfide QDs to form composites, which is an effective strategy to promote photoactivity. In this work, we in-situ synthesized the AIS/ZIS (AgInS/ZnInS) composite photocatalyst by introducing Zn and changing the reaction temperature.
View Article and Find Full Text PDFNano Lett
August 2024
Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
I-III-VI type semiconductor nanocrystals (NCs) have attracted considerable attention due to their environmental friendly nature and large-scale tunable emission. Herein, we report the successful synthesis of full-spectrum (470 to 614 nm) Ag-In-Ga-Zn-S (AIGZS) NCs by precisely regulating the In/Ga ratios using a facile one-pot method. Intriguingly, the photoluminescence (PL) peak width exhibits a continuous narrowing trend with extended reaction time, ultimately reaching a full width at half-maximum (fwhm) of 34 nm for green AIGZS NCs.
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