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Article Abstract
Fast-neutrons play a critical role in a range of applications, including medical imaging, therapy, and nondestructive inspection. However, direct detecting fast-neutrons by semiconductors has proven to be challenging due to their weak interaction with most matter and the requirement of high carrier mobility-lifetime (µτ) product for efficient charge collection. Herein, a novel approach is presented to direct fast-neutron detection using 2D Dion-Jacobson perovskite semiconductor BDAPbBr . This material features a high fast-neutron caption cross-section, good electrical stability, high resistivity, and, most importantly, a record-high µτ product of 3.3 × 10 cm V , outperforming most reported fast-neutron detection semiconductors. As a result, BDAPbBr detector exhibited good response to fast-neutrons, not only achieving fast-neutron energy spectra in counting mode, but also obtaining linear and fast response in integration mode. This work provides a paradigm-shifting strategy for designing materials that efficiently detect fast-neutrons and paves the way toward exciting applications in fast-neutron imaging and therapy.
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