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Although much effort has been devoted to improving photoelectrochemical water splitting of hematite (α-FeO) due to its high theoretical solar-to-hydrogen conversion efficiency of 15.5%, the low applied bias photon-to-current efficiency remains a huge challenge for practical applications. Herein, we introduce single platinum atom sites coordination with oxygen atom (Pt-O/Pt-O-Fe) sites into single crystalline α-FeO nanoflakes photoanodes (SAs Pt:FeO-Ov). The single-atom Pt doping of α-FeO can induce few electron trapping sites, enhance carrier separation capability, and boost charge transfer lifetime in the bulk structure as well as improve charge carrier injection efficiency at the semiconductor/electrolyte interface. Further introduction of surface oxygen vacancies can suppress charge carrier recombination and promote surface reaction kinetics, especially at low potential. Accordingly, the optimum SAs Pt:FeO-Ov photoanode exhibits the photoelectrochemical performance of 3.65 and 5.30 mA cm at 1.23 and 1.5 V, respectively, with an applied bias photon-to-current efficiency of 0.68% for the hematite-based photoanodes. This study opens an avenue for designing highly efficient atomic-level engineering on single crystalline semiconductors for feasible photoelectrochemical applications.
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http://dx.doi.org/10.1038/s41467-023-38343-6 | DOI Listing |
Angew Chem Int Ed Engl
September 2025
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun, 130012, P.R. China.
Neutral aqueous Zn-air batteries (ZABs), while promising for extended lifespans and recyclability compared to alkaline systems, are hindered by sluggish kinetics that limit energy efficiency and power output. Here, we report an effective approach to construct a photo-assisted near-neutral ZAB based on a photo-responsive titanium silicalite-1 zeolite (TS-1). The incorporation of Ru active centers into the 3D porous architecture of TS@C (Ru@TS@C), which exhibits remarkably enhanced electronic conduction, creates interconnected conductive pathways.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS, Novosibirsk 630090, Russia.
While fluorene-containing materials are widely used in organic optoelectronics as bright emitters and hole semiconductors, their diazafluorene analogues have been poorly explored, though their nitrogen atoms could result in electron transport and bring sensory abilities. Here, we report the synthesis, characterization, and detailed study of a series of 4,5-diazafluorene-derivatives with different donor/acceptor substituents and organic semiconductors based on these molecules. The crystal structures of all the materials were solved by X-ray diffraction, indicating the presence of extensive π-stacking and anisotropic charge-transfer pathways.
View Article and Find Full Text PDFJ Colloid Interface Sci
August 2025
Laboratory of Solar Fuel, Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, PR China; Chemistry Department, Faculty of Science, Fayoum University, Fayoum 63514, Egypt. Electronic address:
Post-synthetic modification (PSM) offers a promising approach for tailoring the compositional, structural, and electronic properties of covalent organic frameworks (COFs), thereby enhancing their exciton dissociation ability and facilitating charge transfer. The effectiveness of these approaches is largely compromised by the harsh conditions, complexity, and alteration of the original structure. Therefore, developing a facile yet effective PSM for modulating COFs' properties without altering the original geometry and/or structure is a challenge.
View Article and Find Full Text PDFSmall
September 2025
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences (CAS) Ningbo, Zhejiang, 315201, P. R. China.
Achieving high open-circuit voltage (V) continues to pose a significant challenge for kesterite CuZnSn(S,Se) (CZTSSe) solar cells, predominantly due to the pronounced charge carrier recombination occurring at heterointerface (HEI). To address this issue, an innovative non-metallic boron (B)-modification strategy is developed to optimize the HEI. The key advantages of this strategy are as follows: (i) Leveraging the strong bonding characteristic of B with three valence electrons, the dangling bonds on the absorber surface can be fully saturated, effectively passivating surface states without introducing new defects; (ii) Moreover, diffusion of B into the near-surface region of HEI during selenization process can create weak n-type B donor defects, which lowers the valence band maximum (VBM) of the absorber and mitigates Fermi level pinning.
View Article and Find Full Text PDFJ Am Chem Soc
September 2025
Institute of Chemistry of OrganoMetallic Compounds (ICCOM), National Research Council of Italy (CNR), Via G. Moruzzi 1, 56124 Pisa, Italy.
Mixed-halide perovskites of formula MAPb(BrI), where MA is methylammonium, are of great interest for optoelectronic applications (particularly high-efficiency solar cells) due to their finely tunable bandgap, which enables precise control over light absorption. However, their stability remains a critical challenge, notably due to reversible photoinduced halide segregation. Under continuous illumination, this process leads to the formation of Br- and I-rich domains, which lower device performance by introducing low-bandgap regions that trap charge carriers.
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