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Article Abstract
2H-1T' MoTe van der Waals heterostructures (vdWHs) have promising applications in optoelectronics due to a seamlessly homogeneous semiconductor-metal coupled interface. However, the existing methods to fabricate such vdWHs involved complicated steps that may deteriorate the interfacial coupling and are also lacking precise thickness control capability. Here, a one-step growth method was developed to controllably grow bilayer 2H-1T' MoTe vdWHs in the small growth window overlapped for both phases. Atomic-resolution low-voltage transmission electron microscopy shows the distinct moiré patterns in the bilayer vdWHs, revealing the epitaxial nature of the top 2H phase with the lattice parameters regulated by the underneath 1T' phase. Such epitaxially stacked bilayer vdWHs modulate the interlayer coupling by resonating their vibration modes, as unveiled by the angle-resolved polarized Raman spectroscopy and first-principles calculations.
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Article Synopsis
- The study focuses on the controlled growth of different phases of MoTe thin films using a method called cold-wall chemical vapor deposition, which allows for precise adjustments in parameters like growth rates and temperatures.
- It examines how adding a 1T'-MoTe layer between metal contacts and 2H-MoTe affects electrical properties, finding that it can greatly improve contact performance.
- The enhanced contact characteristics, demonstrated by a change from Schottky to Ohmic behavior and lower resistance values, are linked to the high carrier concentration in the 1T'-MoTe layer, which facilitates better carrier transport.