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Article Abstract
Two-dimensional molybdenum ditelluride (2D MoTe) is an interesting material for artificial synapses due to its unique electronic properties and phase tunability in different polymorphs 2H/1T'. However, the growth of stable and large-scale 2D MoTe on a CMOS-compatible Si/SiO substrate remains challenging because of the high growth temperature and impurity-involved transfer process. We developed a large-scale MoTe film on a Si/SiO wafer by simple sputtering followed by lithium-ion intercalation and applied it to artificial synaptic devices. The AlO passivation layer allows us to develop a stable 1T'-MoTe phase by preventing Te segregation caused by the weak bonding between Mo and Te atoms during lithiation. The lithiated MoTe film exhibits excellent synaptic behavior such as long-term potentiation/depression, a high / ratio (≈10) at lower sweep voltage, and long-term retention. The in situ Raman analysis along with a systematic microstructural analysis reveals that the intercalated Li ion can provide an efficient pathway for conducting filament formation.
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