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Borophene, a rapidly emerging two-dimensional (2D) boron allotrope, has garnered significant attention owing to its inherent anisotropic structural, electronic, and optical properties, positioning it as an ideal material for polarization-sensitive photodetection. This review thoroughly explores the foundational aspects underpinning borophene's directional optical behaviors, closely tied to its distinct lattice architecture and anisotropic electronic attributes. Advanced synthesis methods, particularly molecular beam epitaxy and chemical vapor deposition are critically analyzed, emphasizing structural precision to optimize anisotropic characteristics. Additionally, recent advancements in device engineering are discussed, highlighting pioneering strategies in electrode configuration, interface tailoring, heterostructure integration, plasmonic enhancement, and strain modulation, all aimed at improving polarization selectivity, device responsivity, and spectral sensitivity. Significant experimental breakthroughs showcasing remarkable anisotropic photodetection capabilities spanning broadband spectral ranges are extensively evaluated. The review concludes by outlining ongoing challenges, potential research pathways, and innovative opportunities, notably emphasizing the integration of machine learning (ML) and artificial intelligence (AI). Leveraging these computational techniques is anticipated to accelerate the advancement and fine-tuning of future borophene-based photodetectors. This review provides insights for researchers to harness borophene's anisotropic properties, accelerating advancements in polarization imaging, flexible optoelectronics, and adaptive sensing technology applications.
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http://dx.doi.org/10.1039/d5nr02661j | DOI Listing |
Small
September 2025
Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physic
Antimony selenide (SbSe), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap. To extend detection into the near-infrared (NIR, 700-1350 nm), Bi-alloyed (BiSb)Se is developed via vacuum sputtering and postselenization.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
College of Physics and Electronic Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500, China. Electronic address:
Antimony trisulfide (SbS) has emerged as a promising inorganic semiconductor for optoelectronics due to its distinctive anisotropic crystal structure and suitable bandgap (∼1.7 eV). While hydrothermal synthesis remains challenging for achieving high crystallinity and controlled morphology, we developed an innovative dual‑sulfur precursor strategy utilizing sodium thiosulfate (STS) and thioacetamide (TAA) at a 7:2 M ratio with SbCl.
View Article and Find Full Text PDFACS Nano
September 2025
College of Physics, Donghua University, Shanghai 201620, China.
Broadband anisotropic photodetectors show great promise for polarization-sensitive imaging and multispectral optoelectronic systems yet face critical challenges in material anisotropy modulation and broadband sensitivity. Weyl semimetals exhibit giant optical anisotropy and tunable heterojunction band alignment, enabling high-performance anisotropic photodetection. Herein, ultrabroadband PDs based on the NbNiTe (niobium nickel telluride), enabled by antenna integration and heterostructure engineering, achieve high sensitivity from visible to Terahertz (THz).
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
School of Precision Instruments and Opto Electronics Engineering, Tianjin University, Tianjin 300072, China.
Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBrI/Si/Ag vertical structure based on the CsPbBrI and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection.
View Article and Find Full Text PDFNanoscale
August 2025
Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Blvd, Shenzhen 518055, China.
Borophene, a rapidly emerging two-dimensional (2D) boron allotrope, has garnered significant attention owing to its inherent anisotropic structural, electronic, and optical properties, positioning it as an ideal material for polarization-sensitive photodetection. This review thoroughly explores the foundational aspects underpinning borophene's directional optical behaviors, closely tied to its distinct lattice architecture and anisotropic electronic attributes. Advanced synthesis methods, particularly molecular beam epitaxy and chemical vapor deposition are critically analyzed, emphasizing structural precision to optimize anisotropic characteristics.
View Article and Find Full Text PDF