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The incorporation of two-dimensional (2D) structures into Sn-based perovskites has been confirmed to effectively improve both efficiency and stability. While the use of fluorinated organic materials is known to improve device performance, a detailed understanding of their mechanisms has remained elusive. In this study, we demonstrate that incorporating a trifluoromethyl-substituted organic halide material (F-BAI) directly into the perovskite precursor without additional surface treatment results in predominant surface localization and acts as surface passivation. This passivation reduces charge recombination and enhances charge extraction, leading to an increased power conversion efficiency in perovskite solar cells (PeSCs). The device incorporating the fluorinated material achieved an efficiency of up to 12.92% compared to 10.01% for the control device. Furthermore, the hydrophobicity of the fluorinated groups substantially improves the stability of Sn-based PeSCs, particularly in humid environments (60%) and ambient air.
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http://dx.doi.org/10.1021/acsami.5c06230 | DOI Listing |
J Am Chem Soc
August 2025
State Key Laboratory of Heavy Oil Processing, College of Chemical Engineering and Environment, China University of Petroleum (Beijing), Beijing 102249, China.
Electrochemical reduction of CO to formate over Sn-based catalysts offers an effective carbon-neutral approach for chemical production and renewable energy storage. However, poor selectivity under high current densities persists, primarily due to the instability of Sn-O active sites and slow water dissociation. In this work, a La-doped SnO catalyst is synthesized for efficient CO conversion to formate.
View Article and Find Full Text PDFJ Am Chem Soc
September 2025
State Key Laboratory of Bioinspired Interfacial Materials Science, Bioinspired Science Innovation Center, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China.
Deciphering the spatiotemporal evolution of catalytic active sites under operational conditions is pivotal for establishing precise design principles in electrocatalysis. However, conventional electrochemical characterization techniques, which are limited in correlating physical topographical features with chemical activity, fundamentally obstruct the linkage between nanoscale structural and macroscopic activity descriptors. To address this challenge, an integrated operando electrochemical atomic force microscopy-scanning electrochemical microscopy platform was implemented, enabling simultaneous nanoscale tracking of the topographic reorganization and local activity distribution during the nitrate reduction reaction.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
August 2025
Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China.
High-entropy Prussian blue analogues (PBAs) have considered as high-performance cathodes for sodium-ion batteries (SIBs). However, the impact of high-entropy component compatibility on electrodes' lattice stress and kinetics remains underexplored. Herein, a series of high-entropy PBAs are served as cathode materials for SIBs.
View Article and Find Full Text PDFNat Chem
September 2025
Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Zero-dimensional (0D) metal halides, which feature discrete metal halide octahedra interspersed with large organoammonium cations, are the building blocks of halide perovskites. The optical properties of these materials make them promising candidates in light-emitting devices. However, developing their general design principles remains challenging.
View Article and Find Full Text PDFAdv Mater
August 2025
State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Shaanxi Key Laboratory of Flexible Electronics, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China.
Tin (Sn)-based perovskite field-effect transistors (FETs) have garnered considerable attention as promising candidates for next-generation electronics and optoelectronics due to their exceptional charge transport properties, cost-effectiveness, and eco-friendly nature. However, owing to facile Sn vacancy formation, serious oxidation as well as uncontrollable crystallization, Sn-based perovskites generally suffer from inferior film quality with high-density defects, resulting in unfavorable self-doping effects with high hole concentrations. Furthermore, defects within the relatively thin films (tens of nanometers) of these FETs, primarily located at the surface and grain boundaries (GBs) of perovskite films, significantly impact the charge transport, ion migration, and structural stability during device operation, thereby impeding the achievement of high-performance Sn-based perovskite FETs.
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