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Field-effect transistors (FETs), known for their rapid response and signal amplification capabilities, have attracted significant research interest for the detection of biomarkers. However, the development of multi-channel sensors using FETs and their wearable applications are impeded by the rigid substrates and large areas. Here, we reported a wearable EGFET sensor array patch that integrates gate-all-around field-effect transistors (GAA FETs) and flexible printed circuit board (FPCB) patches to overcome these challenges. The patch takes advantage of the excellent electrical properties and small size of GAA FETs, allowing for multi-biomarker detection. Additionally, it integrates large-scale, low-cost FPCB-based electrodes to enhance the flexibility of the patch. Comprehensive characterization experiments have demonstrated the performance of the patch to detect multiple biomarkers, including glucose, lactate, Na, K, and Ca. This innovative patch is promising to facilitate the development of FET-based multi-channel wearable sensors, and has the potential to help realize more comprehensive health monitoring.
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http://dx.doi.org/10.1039/d5lc00162e | DOI Listing |
ACS Appl Mater Interfaces
September 2025
N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS, Novosibirsk 630090, Russia.
While fluorene-containing materials are widely used in organic optoelectronics as bright emitters and hole semiconductors, their diazafluorene analogues have been poorly explored, though their nitrogen atoms could result in electron transport and bring sensory abilities. Here, we report the synthesis, characterization, and detailed study of a series of 4,5-diazafluorene-derivatives with different donor/acceptor substituents and organic semiconductors based on these molecules. The crystal structures of all the materials were solved by X-ray diffraction, indicating the presence of extensive π-stacking and anisotropic charge-transfer pathways.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFNanoscale
September 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Chemical doping has emerged as a powerful approach for modulating the electronic properties of graphene, and particularly for enabling its integration into advanced electronic and optoelectronic devices. While considerable progress has been made in achieving stable p-type doping, realizing efficient and reliable n-type doping remains a greater challenge due to the inherent instability of most electron-donating dopants and intrinsic semi-metallic nature of pristine graphene. This review summarises the recent developments in n-type chemical doping of graphene films, with a primary focus on substitutional doping and surface charge transfer mechanisms.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2025
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan.
Understanding anisotropic charge transport in molecular semiconductors is crucial for device optimization, yet its intricate dependence on orbital-specific intermolecular interactions and molecular packing remains a challenge, especially in ambipolar systems. In ambipolar semiconductors, where both holes and electrons participate in conduction, distinct molecular orbitals prompt a critical inquiry: can orbital variations result in coexisting yet distinct anisotropic transport properties within a single component? We confirm this possibility by demonstrating that the air-stable nickel dithiolene, Ni(4OPr), exhibits such behavior. Despite its herringbone stacking implying a two-dimensional electronic structure, Ni(4OPr) uniquely exhibits distinct intermolecular interactions for hole (HOMO-to-HOMO; HOMO = highest occupied molecular orbital) and electron (LUMO-to-LUMO; LUMO = lowest unoccupied molecular orbital) transport.
View Article and Find Full Text PDFAppl Radiat Isot
September 2025
Dept. of Electrical and Computer Engineering, Illinois Institute of Technology, Siegel Hall, 3301 South Dearborn Street, Chicago, Il, 60616, USA; Sch. of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Feedback resistor-less charge-sensitive pre-amplifiers for X-ray/γ-ray photon (and e particle) counting photodiode radiation spectrometers operate with their input transistor in an unusual mode (i.e. the gate is slightly forward biased).
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