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Article Abstract

Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm V s and an I/I ratio exceeding 10 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved.

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http://dx.doi.org/10.1002/adma.202412210DOI Listing

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Article Synopsis
  • The introduction of p-type disordered tellurium oxide enhances device capabilities by enabling dual-mode reconfigurability, allowing it to function as both a logic transistor and a neuromorphic device.
  • The disordered surface of the tellurium oxide film improves oxygen adsorption, which helps regulate carrier concentration, resulting in high-performance characteristics with notable hole mobility and an impressive current ratio in transistor mode.
  • As a neuromorphic device, this technology mimics the vision of bees, effectively responding to blue-to-ultraviolet light, and achieving tasks like in-sensor denoising and image recognition in both static and dynamic environments.
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