Biomimetic microstructure design for ultrasensitive piezoionic mechanoreceptors in multimodal object recognition.

The challenge of achieving high recognition accuracy in artificial mechanoreceptors arises from the trade-off between sensitivity and stability in the sensing unit. Inspired by human skin, we developed a biomimetic approach that involves structural and engineering enhancements for ionic-conducting polyvinyl alcohol/TiCT (PVA/MXene) composite hydrogel microneedles (HM) to enhance the sensitivity. By integrating the HM with a polyethylene terephthalate/indium tin oxide (PET/ITO) film, we create a non-faradaic junction that ensures stable electrical output without transmission loss under stimulation.

Flexoelectric manipulation of ferroelectric polarization in self-strained tellurium.

Beyond conventional ferroelectric compounds, the realization of single-element ferroelectricity expands the scope of ferroelectric materials and diversifies polarization mechanisms. However, strategies for manipulating ferroelectric dipoles in elemental ferroelectrics remain underexplored, limiting their broader applications. Here, we introduce a universal flexoelectric manipulation strategy to tune the ferroelectric and piezoelectric polarization of one-dimensional self-strained tellurium (Te) ferroelectrics.

2D Materials for Emerging Neuromorphic Vision: From Devices to In-Sensor Computing.

The von Neumann architecture faces significant challenges in meeting the growing demand for energy-efficient, real-time visual processing in edge applications, primarily due to data-transfer bottlenecks between processors and memory. Two-dimensional (2D) materials, characterized by their atomic-scale thickness, adjustable optoelectronic properties, and diverse integration capabilities, present a promising avenue for advancing in-sensor computing. These material systems, which include ferroelectric 2D materials, topological insulators, and twistronic systems, enhance the device's ability to handle perception, computation, and storage efficiently.

Terahertz In-Sensor Computing Utilizing Photothermoelectric Thin Films.

Terahertz (THz) detection is pivotal for biomedical diagnostics and security screening, enabled by its non-ionizing nature and characteristic "fingerprint" spectra. However, weak THz-matter interactions, energy-intensive processing, and complex hardware integration hinder its practical use. To this aim, a layered bismuth selenide (BiSe)-based THz detection array is fabricated via low-temperature pulse irradiation synthesis (PIS), exhibiting a tunable thermally coupled bidirectional response.

In-material physical computing based on reconfigurable microwire arrays via halide-ion segregation.

Conventional computer systems based on the Von Neumann architecture rely on silicon transistors with binary states for information representation and processing. However, exploiting emerging materials' intrinsic physical properties and dynamic behaviors offers a promising pathway for developing next-generation brain-inspired neuromorphic hardware. Here, we introduce a stable and controllable photoelectricity-induced halide-ion segregation effect in epitaxially grown mixed-halide perovskite CsPbBrI microwire networks on mica, as confirmed by various in-situ measurements.

High-Stability Ionic Conductive Filtering Transistors for Bio-Inspired Signal Processing.

Applying low-pass filters in satellite communications effectively eliminates unwanted high-frequency signals and noise during image capture, mirroring the human brain's selective filtering of sensory stimuli. To enhance the efficiency of signal processing for remote sensing images, a neuromorphic information processing array based on oxide field-effect transistors are developed with HfO-lithium aluminium germanium phosphate (LAGP)-HfO stacked dielectric (HLH FETs). The Li-ion solid-state electrolytes are stabilized in complex environments (extreme temperature and magnetic field) due to the protective sandwich structure.

Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors.

Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere.

Tunable Bipolar Photothermoelectric Response from Mott Activation for In-Sensor Image Preprocessing.

In-sensor image preprocessing, a subset of edge computing, offers a solution to mitigate frequent analog-digital conversions and the von Neumann bottleneck in conventional digital hardware. However, an efficient in-sensor device array with large-scale integration capability for high-density and low-power sensory processing is still lacking and highly desirable. This work introduces an adjustable broadband photothermoelectric detector based on a phase-change vanadium dioxide thin-film transistor.

Atomic-scale self-rearrangement of hetero-metastable phases into high-density single-atom catalysts for the oxygen evolution reaction.

Maximizing metal-substrate interactions by self-reconstruction of coadjutant metastable phases can be a delicate strategy to obtain robust and efficient high-density single-atom catalysts. Here, we prepare high-density iridium atoms embedded ultrathin CoCeOOH nanosheets (CoCe-O-Ir) by the electrochemistry-initiated synchronous evolution between metastable iridium intermediates and symmetry-breaking CoCe(OH) substrates. The CoCe-O-Ir delivers an overpotential of 187 mV at 100 mA cm and a steady lifespan of 1000 h at 500 mA cm for oxygen evolution reaction.

Infrared In-Sensor Computing Based on Flexible Photothermoelectric Tellurium Nanomesh Arrays.

The inherent limitations of traditional von Neumann architectures hinder the rapid development of internet of things technologies. Beyond conventional, complementary metal-oxide-semiconductor technologies, imaging sensors integrated with near- or in-sensor computing architectures emerge as a promising solution. In this study, the multi-scale van der Waals (vdWs) interactions in 1D tellurium (Te) atomic chains are explored, leading to the deposition of a photothermoelectric (PTE) Te nanomesh on a polymeric polyimide substrate.

Bidirectional Photovoltage-Driven Oxide Transistors for Neuromorphic Visual Sensors.

Biological vision is one of the most important parts of the human perception system. However, emulating biological visuals is challenging because it requires complementary photoexcitation and photoinhibition. Here, the study presents a bidirectional photovoltage-driven neuromorphic visual sensor (BPNVS) that is constructed by monolithically integrating two perovskite solar cells (PSCs) with dual-gate ion-gel-gated oxide transistors.

Electrode-Dependent and Tunable Sub-to-Super-Linear Responsivity in Mott Material-Enabled Near-Infrared Photodetectors for Advanced Near-Sensor Image Processing.

Brain-like intelligence is ushering humanity into an era of the Internet of Perceptions (IoP), where the vast amounts of data generated by numerous sensing nodes pose significant challenges to transmission bandwidth and computing hardware. A recently proposed near-sensor computing architecture offers an effective solution to reduce data processing delays and energy consumption. However, a pressing need remains for innovative hardware with multifunctional near-sensor image processing capabilities.

Electrical Polarity Modulation in V-Doped Monolayer WS for Homogeneous CMOS Inverters.

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties.

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance.

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g.

Multiscale Confinement Engineering for Boosting Overall Water Splitting by One-Step Stringing of a Single Atom and a Janus Nanoparticle within a Carbon Nanotube.

Enzyme-mimicking confined catalysis has attracted great interest in heterogeneous catalytic systems that can regulate the geometric or electronic structure of the active site and improve its performance. Herein, a liquid-assisted chemical vapor deposition (LCVD) strategy is proposed to simultaneously confine the single-atom Ru sites onto sidewalls and Janus Ni/NiO nanoparticles (NPs) at the apical nanocavities to thoroughly energize the N-doped carbon nanotube arrays (denoted as Ni/NiO@Ru-NC). The bifunctional Ni/NiO@Ru-NC electrocatalyst exhibits overpotentials of 88 and 261 mV for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) at 100 mA cm in alkaline solution, respectively, all ranking the top tier among the carbon-supported metal-based electrocatalysts.

Optically Readable Organic Electrochemical Synaptic Transistors for Neuromorphic Photonic Image Processing.

Optically readable organic synaptic devices have great potential in both artificial intelligence and photonic neuromorphic computing. Herein, a novel optically readable organic electrochemical synaptic transistor (OR-OEST) strategy is first proposed. The electrochemical doping mechanism of the device was systematically investigated, and the basic biological synaptic behaviors that can be read by optical means are successfully achieved.

Van der Waals nanomesh electronics on arbitrary surfaces.

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability.

Contact Engineering of Halide Perovskites: Gold is Not Good Enough; Metalloid is Better.

The operation stability of halide perovskite devices is the critical issue that impedes their commercialization. The main reasons are that the ambient H O molecules can easily deteriorate the perovskites, while the metal electrodes react in different degrees with the perovskites. Herein, one kind of new electrode, the metalloids, is reported, which are much more stable than the conventional noble metals as electrical contacts for halide perovskites.

Electrically Switchable Polarization in Bi O Se Ferroelectric Semiconductors.

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi O Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d ) of 4.

Au-Seeded CsPbI Nanowire Optoelectronics via Exothermic Nucleation.

Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (Δ < 0), the Au-seeded CsPbI nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS Heterojunctions.

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits.