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α-FeO is a very attractive photoanode for photoelectrochemical (PEC) water decomposition. However, its short diffusion length, poor conductivity, and fast charge-carrier recombination severely limit device efficiency. Here, coloading an AlO passivation layer and a CoO cocatalyst onto Ti-doped α-FeO was carried out to promote PEC water oxidation by improving charge separation and transfer at the electrode/electrolyte interface and inhibiting photocarrier recombination. The optimized Ti:FeO/AlO/CoO photoanode shows a large photocurrent density of 1.41 mA cm at 1.23 V vs reversible hydrogen electrode, which is 47 times greater than that of a pristine Ti:FeO photoanode. The dual modifications with a combined passivation layer and cocatalyst on the photoanode verify a valuable way for solar energy conversion in PEC water oxidation.
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http://dx.doi.org/10.1021/acsami.4c14137 | DOI Listing |
Nanomicro Lett
September 2025
College of New Materials and New Energies, Shenzhen Technology University, Lantian Road 3002, Pingshan, 518118, Shenzhen, People's Republic of China.
The introduction of two-dimensional (2D) perovskite layers on top of three-dimensional (3D) perovskite films enhances the performance and stability of perovskite solar cells (PSCs). However, the electronic effect of the spacer cation and the quality of the 2D capping layer are critical factors in achieving the required results. In this study, we compared two fluorinated salts: 4-(trifluoromethyl) benzamidine hydrochloride (4TF-BA·HCl) and 4-fluorobenzamidine hydrochloride (4F-BA·HCl) to engineer the 3D/2D perovskite films.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, P. R. China.
Quantum dots (QDs) converted to micro light-emitting diodes (LEDs) have emerged as a promising technology for next-generation display devices. However, their commercial application has been hindered by the susceptibility of QDs to photodegradation when directly exposed to an open environment. Here, we develop functional ligand zinc bis[2-(methacryloyloxy)ethyl] phosphate (Zn(BMEP)) to passivate QD surface anions through a phosphine-mediated surface reaction.
View Article and Find Full Text PDFSmall
September 2025
Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing, 400715, P. R. China.
Perovskites have a large number of intrinsic defects and interface defects, which often lead to non-radiative recombination, and thus affect the efficiency of perovskite solar cells (PSCs). Introducing appropriate passivators between the perovskite layer and the transport layer for defect modification is crucial for improving the performance of PSCs. Herein, two positional isomers, 1-naphthylmethylammonium iodide (NMAI) and 2-naphthylmethylammonium iodide (NYAI) are designed.
View Article and Find Full Text PDFAdv Mater
September 2025
Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario, N6A 5B9, Canada.
Anode-free sulfide-based all-solid-state lithium metal batteries (ASSLMBs), which eliminate the need for a lithium metal anode during fabrication, offer superior energy density, enhanced safety, and simplified manufacturing. Their performance is largely influenced by the interfacial properties of the current collectors. Although previous studies have investigated the degradation of sulfide electrolytes on commonly used copper (Cu) and stainless steel (SS) current collectors, the impact of spontaneously formed surface oxides, such as copper oxide (CuO/CuO) and chromium oxide (CrO), on interfacial stability remains underexplored.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
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