Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V-doped (Bi,Sb)Te (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 10Acm, indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10TAcm and the interfacial charge-to-spin conversion efficiency to 3.9 ± 0.3 nm. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.202406772 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Suppression of Spin-Orbit Torque Switching by the Magnetic Proximity Effect.
ACS Nano
September 2025
State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
Functional magnetic multilayers are particularly interesting for enabling many emerging spintronic physics, including spin-orbit torque (SOT), magnetic proximity effect (MPE), and perpendicular magnetic anisotropy (PMA), among many others. A comprehension of these spintronic phenomena is vital for the development of advanced spintronic materials and devices. Here, we investigate the interplay between the MPE and the current-induced SOT switching in the perpendicularly magnetized Pt/[Co/Pd] multilayers (with being the number of repetitions).
View Article and Find Full Text PDFNéel Tensor Torque in Polycrystalline Antiferromagnets.
Adv Mater
August 2025
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300044, Taiwan.
Antiferromagnets (AFMs) offer exceptional promise for next-generation spintronic devices due to their ultrafast dynamics and resilience to external perturbations. However, while single-crystalline AFMs have been capable of being electrically manipulated, controlling polycrystalline AFM spins remains a major challenge due to their aperiodic nature. In this work, a Néel tensor is introduced as a rank-two symmetric tensor that statistically captures the spin correlations in polycrystalline AFMs, a fundamental departure from the conventional Néel vector approach.
View Article and Find Full Text PDFField-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition.
Sci Adv
August 2025
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, USA.
Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature.
View Article and Find Full Text PDFNéel spin-orbit torque in antiferromagnetic quantum spin and anomalous Hall insulators.
Nat Commun
August 2025
Department of Physics and Astronomy, University of California, Riverside, CA, USA.
Interplay between topological electrons and magnetic ordering enables efficient electrical control of magnetism. We extend the Kane-Mele model to include the exchange coupling to a collinear antiferromagnetic (AFM) order, which allows the system to exhibit the quantum anomalous Hall and quantum spin Hall effects in the absence of a net magnetization. These topological phases support a staggered Edelstein effect through which an applied electric field can generate opposite non-equilibrium spins on the two AFM sublattices, realizing the Néel-type spin-orbit torque (NSOT).
View Article and Find Full Text PDFA Widely Tunable Spin-Orbit Torque Device through the Silicon Compatible CMOS Platform.
Adv Mater
August 2025
State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
Analogous to the manipulation of electrons in field-effect transistors, achieving the voltage-controlled spin-orbit torque and spin current will become indispensable to next-generation spintronic devices, enabling nonvolatile cache memory, spin logic, and other advanced functionalities. Recently, considerable progress has been realized in the electric field control of spin-orbit torques. Due to the limitations of integration and operating voltage, the practical use of voltage-controlled MRAM is still challenging.
View Article and Find Full Text PDF