A 2D Optoelectronic Logic Device with Ultralow Supply Voltage.

ACS Appl Mater Interfaces

Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China.

Published: September 2024


Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

Optoelectronic logic devices (OELDs) provide a cure for many visually impaired individuals. However, traditional OELDs have limitations, such as excessive channel resistance and complex structure, leading to high supply voltage and decreased efficiency of signal transmission. We report ultralow-voltage OELDs by seriating two 2D MoTe transistors with sub-10 nm channel lengths. The short channel length and atomically flat interface result in a low-resistance light-sensing unit that can operate with a low supply voltage and function well in weak-light conditions. The devices achieve an on state without light signal input and an off state with light signal input at an ultralow supply voltage of 50 mV, lower than the retinal bearing voltage of 70 mV. Additionally, MoTe's excellent optoelectronic properties allow the device to perceive light from visible to near-infrared wavelengths with high sensitivity to weak light signals. The specific perception of visible light intensity is 0.03 mW·mm, and the near-infrared light intensity is 0.1 mW mm. The device also has a response time of 8 ms, meeting human needs. Our findings provide a promising solution for developing low-voltage artificial retinas.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acsami.4c08525DOI Listing

Publication Analysis

Top Keywords

supply voltage
16
optoelectronic logic
8
ultralow supply
8
state light
8
light signal
8
signal input
8
light intensity
8
light
6
voltage
5
logic device
4

Similar Publications

To address palladium supply-demand challenges and conventional recovery inefficiencies, this study develops a lithium-mediated electrodeposition process for efficient palladium recycling from spent catalysts. Density functional theory calculations identified a controlled Pd→LiPd (Pd)→LiPdO (Pd) transformation pathway, and experimental verification confirmed that LiPd precursors underwent oxidative transformation into LiPdO with structural inheritance. LiPdO exhibited Pd-O coordination and underwent rapid dissolution in dilute hydrochloric acid.

View Article and Find Full Text PDF

Background: Traditional sample introduction strategies in trace element analysis include either liquid nebulization or chemical vapor generation (CVG). Recently, plasma-mediated vapor generation (PMVG) has emerged as an elegant alternative, producing volatile species through plasma interaction with liquid sample, without the need for reagents. Both CVG or PMVG generate volatile species, usually molecular structured, which require atomization for atomic spectrometry detection.

View Article and Find Full Text PDF

The burgeoning Internet of Things demands highly customizable microbatteries (MBs) to power miniaturized electronics, yet challenges exist in fabricating ultra-small MBs and integrating customizable modules within confined areas. Herein, we report a novel photolithographic microfabrication strategy enabling the large-scale production of monolithic integrated ultra-small MBs. The approach utilizes photoresist grooves as micropattern templates and employs a non-destructive mechanical peeling process to fabricate precise MBs with a compact area of 2.

View Article and Find Full Text PDF

Pacemaker myocytes of the sinoatrial (SA) node initiate each heartbeat through coupled voltage and Ca oscillators, but whether ATP supply is regulated on a beat-by-beat schedule in these cells has been unclear. Using genetically encoded sensors targeted to the cytosol and mitochondria, we tracked beat-resolved ATP dynamics in intact mouse SA node and isolated myocytes. Cytosolic ATP rose transiently with each Ca transient and segregated into high- and low-gain phenotypes defined by the Ca-ATP coupling slope.

View Article and Find Full Text PDF

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers.

View Article and Find Full Text PDF