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The demand for low-dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out-of-plane and in-plane domains with polarization along out-of-plane and in-plane directions in the orthorhombic-like freestanding PTO films, respectively. In contrast, only out-of-plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well-maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide-temperature-range SHG. These findings provide valuable understanding for the development of the next-generation electronic nanodevices with flexibility and thermostability.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11348163 | PMC |
http://dx.doi.org/10.1002/advs.202307571 | DOI Listing |
Sci Rep
August 2025
Department of Applied Physics, Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon, 446-701, Republic of Korea.
Understanding and controlling the domain structures and their stability in ferroelectric thin films is crucial for advancing technologies such as energy storage, memory devices, and sensors. By optimizing domain behavior, it is possible to enhance the performance, efficiency, and reliability of ferroelectric-based systems in these applications. Here, we investigated the imprinted ferroelectric hysteresis loops and the imprinted ferroelectric domain structures of the PbTiO (PTO) multilayer thin films, including the oxygen depletion layer.
View Article and Find Full Text PDFNano Lett
July 2025
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China.
Applications of ferroelectric films critically depend on their polar ordering, which is highly sensitive to the film size and substrate constraint. Previous studies have revealed a much enhanced piezoresponse in ferroelectric nanoislands relaxed from substrate clamping, yet the proposed mechanisms were completely opposite. We revisit this problem utilizing clamped epitaxial and freestanding PbTiO (PTO) films as our model system for systematic investigation via scanning transmission electron microscopy, piezoresponse force microscopy, and second harmonic generation.
View Article and Find Full Text PDFAdv Mater
August 2025
Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
Skyrmions in ferromagnetic materials exhibit either Néel or Bloch characteristics. Although skyrmions in ferromagnetic materials can be readily obtained via inter-spin interactions, a skyrmion in ferroelectric materials exhibiting solely Néel or Bloch characteristics has not yet been discovered. Here, by modulating the formation of skyrmion-bubbles in [(PbTiO)/(SrTiO)] [(PTO/STO)] bilayers grown on STO substrates, the atomic morphology of pure Néel-skyrmion is observed with a topological charge of ± 1 in the ultrathin bilayered films with the thickness of 2 unit cells (u.
View Article and Find Full Text PDFNanoscale
May 2025
Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon 446-701, Republic of Korea.
We investigated the local ferroelectric domain switching phenomena in PbTiO (PTO) thin films, which were affected by both the imprint effect and the flexoelectric effect. DPTO/PTO multilayer films, in which an oxygen-deficient PbTiO (DPTO) layer was formed on a PTO layer, exhibited imprinted ferroelectric hysteresis loops. The DPTO/PTO thin films, which exhibit improved energy storage characteristics due to the imprint effect, showed a decrease in the local ferroelectric domain switching voltage when switched in a specific direction.
View Article and Find Full Text PDFJ Colloid Interface Sci
February 2025
School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China; Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, Guangdong Engineering Technology Research Center for High-performance Organic and Polymer Photoele