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The lack of design principle for developing high-performance polymer materials displaying strong fluorescence and high ambipolar charge mobilities limited their performance in organic light-emitting transistors (OLETs), electrically pumped organic laser, and other advanced electronic devices. A series of semiladder polymers by copolymerization of weak acceptors (TPTQ or TPTI) and weak donors (fluorene (F) or carbazole (C)) have been developed for luminescent and charge transporting properties. It was found that enhanced planarity, high crystallinity, and a delicate balance in interchain aggregation obtained in the new copolymer, TPTQ-F, contributed to high ambipolar charge mobilities and photoluminescent quantum yield. TPTQ-F showed excellent performance in solution-processed multilayered OLET devices with an external quantum efficiency (EQE) of 5.3%.
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http://dx.doi.org/10.1021/jacs.1c01659 | DOI Listing |
Angew Chem Int Ed Engl
September 2025
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan.
Understanding anisotropic charge transport in molecular semiconductors is crucial for device optimization, yet its intricate dependence on orbital-specific intermolecular interactions and molecular packing remains a challenge, especially in ambipolar systems. In ambipolar semiconductors, where both holes and electrons participate in conduction, distinct molecular orbitals prompt a critical inquiry: can orbital variations result in coexisting yet distinct anisotropic transport properties within a single component? We confirm this possibility by demonstrating that the air-stable nickel dithiolene, Ni(4OPr), exhibits such behavior. Despite its herringbone stacking implying a two-dimensional electronic structure, Ni(4OPr) uniquely exhibits distinct intermolecular interactions for hole (HOMO-to-HOMO; HOMO = highest occupied molecular orbital) and electron (LUMO-to-LUMO; LUMO = lowest unoccupied molecular orbital) transport.
View Article and Find Full Text PDFNat Commun
August 2025
State Key Laboratory of Integrated Chips and Systems, College of Integrated Circuits and Micro-Nano Electronics, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Recently, ambipolar semiconductor devices have excelled in developing programmable photodiodes for brain-inspired image sensors, offering energy, speed, and security gains. However, the lack of mature processing techniques makes their manufacture challenging, and the often-adopted Schottky contacts limit their performance. Although CMOS technology is successful in integrated circuits, the employed ohmic contacts can only transport one type of carriers, failing to meet the requirement of electrons and holes working simultaneously in ambipolar devices.
View Article and Find Full Text PDFAdv Mater
August 2025
School of Physics, Central South University, Changsha, 410083, P. R. China.
Interfacial charge transfer leads to the formation of an electric dipole at the interface of a van der Waals (vdW) heterostructure. The switching of dipole polarity using an electric field provides an effective method for modulating the electronic properties of vdW systems. However, the experimental observation of switched vdW dipoles is challenging, as it is concealed by the electrostatic gating effect.
View Article and Find Full Text PDFNat Commun
August 2025
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric.
View Article and Find Full Text PDFSmall
August 2025
School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea.
Chalcohalides have emerged as novel semiconducting materials for fabricating electronic, optoelectronic, and electrochemical devices. Particularly, antimony (Sb)-based chalcohalides have attracted attention as solar energy conversion and thermoelectrics. Herein, the first report on the colloidal synthesis of antimony sulfobromide (SbSBr) nanowire bundles (NBs) via a hot-injection method is reported.
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