98%
921
2 minutes
20
Aerosol jet printing of electronic devices is increasingly attracting interest in recent years. However, low capability and high resistance are still limitations of the printed electronic devices. In this paper, we introduce a novel post-treatment method to achieve a high-performance electric circuit. The electric circuit was printed with aerosol jet printing method on an ULTEM substrate. The ULTEM substrate was fabricated by the Fused Deposition Modelling method. After post-treatment, the electrical resistance of the printed electric circuit was changed from 236 mΩ to 47 mΩ and the electric property was enhanced. It was found that the reduction of electric resistance was caused by surface property changes. Different surface analysis methods including scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS) were used to understand the effectiveness of the proposed method. The results showed that the microsurface structure remained the same original structure before and after treatment. It was found that the surface carbon concentration was significantly increased after treatment. Detailed analysis showed that the C-C bond increased obviously after treatment. The change of electrical resistance was found to be limited to the material's surface. After polishing, the circuit resistance was changed back to its original value. As the electric circuit is the basic element of electric devices, the proposed method enables the fabrication of high performance devices such as capacitors, strain gauge, and other sensors, which has potential applications in many areas such as industrial, aerospace, and military usage.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763611 | PMC |
http://dx.doi.org/10.3390/ma13245602 | DOI Listing |
Sci Adv
September 2025
Movement Disorder and Neuromodulation Unit, Department of Neurology, Charité-Universitätsmedizin Berlin, corporate member of Freie Universität Berlin and Humboldt-Universität zu Berlin, Berlin, Germany.
Subthalamic deep brain stimulation (STN-DBS) provides unprecedented spatiotemporal precision for the treatment of Parkinson's disease (PD), allowing for direct real-time state-specific adjustments. Inspired by findings from optogenetic stimulation in mice, we hypothesized that STN-DBS can mimic dopaminergic reinforcement of ongoing movement kinematics during stimulation. To investigate this hypothesis, we delivered DBS bursts during particularly fast and slow movements in 24 patients with PD.
View Article and Find Full Text PDFSci Adv
September 2025
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
Embodied intelligence in soft robotics offers unprecedented capabilities for operating in uncertain, confined, and fragile environments that challenge conventional technologies. However, achieving true embodied intelligence-which requires continuous environmental sensing, real-time control, and autonomous decision-making-faces challenges in energy management and system integration. We developed deformation-resilient flexible batteries with enhanced performance under magnetic fields inherently present in magnetically actuated soft robots, with capacity retention after 200 cycles improved from 31.
View Article and Find Full Text PDFPhys Rev Lett
August 2025
RIKEN, Center for Quantum Computing, Wakoshi, Saitama 351-0198, Japan.
Disorder and non-Hermitian effects together can upend how waves localize. In a 1D disordered chain, the non-Hermitian skin effect (NHSE) can induce Anderson delocalization, defying the usual rule that disorder in low dimensions always localizes states. While weak disorder leaves the NHSE intact, strong disorder restores Anderson localization.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China.
A highly sensitive, self-powered position-sensitive detector (PSD) based on a PEDOT:PSS/Si heterojunction is prepared. Band structure optimization via FS-300 additive doping significantly enhances the built-in electric field, achieving a maximum open-circuit voltage of 0.45 V (0.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
Stress engineering is an effective way to tune the performance of semiconductors, which has been verified in the work of inorganic and organic single-crystal semiconductors. However, due to the limitations of the vapor-phase growth preparation conditions, the deposited polycrystalline organic semiconductors are more susceptible to residual stress. Therefore, it is of great research significance to develop a low-cost stress engineering applicable to vapor-deposited semiconductors.
View Article and Find Full Text PDF