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Texturization tuning is of crucial significance for designing and developing high-performance thermoelectric materials and devices. Here, we report for the first time that a strong texturization effect induces an in-plane high-performance thermoelectric and an out-of-plane low lattice thermal conductivity in Sb-substituted misfit-layered (SnS)(TiS) alloys. In the in-plane direction, the oriented texture promotes a high carrier mobility, contributing to the maximization of the power factor (∼0.90 mW K m). Moreover, the in-plane lattice thermal conductivity dramatically reduces deriving from the point defects due to the Sb substitution and weakened transverse sound velocity owing to the softening of bonding, ultimately leading to one of the highest thermoelectric performances ever reported among misfit-layered chalcogenides. In particular, in the out-of-plane direction, the texturization triggers the lowest lattice thermal conductivity (∼0.39 W K m), exceeding the theoretical limit of the Debye-Cahill model, which provides a precious opportunity to investigate this real Sb-substituted (SnS)(TiS) material. The present finding in misfit-layered chalcogenides provides a novel strategy for manipulating thermoelectrics via texturization engineering.
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http://dx.doi.org/10.1021/acsami.9b17964 | DOI Listing |
ACS Nano
September 2025
State Key Lab of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
SnSe is a layered semiconductor with intrinsically low thermal conductivity, making it a promising candidate for thermoelectric and thermal management applications. However, detailed measurements of the intrinsic thermal conductivity of SnSe nanosheets grown by chemical vapor deposition (CVD) remain scarce. Here, monocrystalline SnSe nanosheets were synthesized by CVD, with systematic investigation of thickness-dependent in-plane thermal conductivity.
View Article and Find Full Text PDFRev Sci Instrum
September 2025
National Time Service Center, Chinese Academy of Sciences, Xi'an 710600, China.
We report the design and in-orbit demonstration of a compact optical system for a 87Sr optical lattice clock aboard the Chinese Space Station. This system adopts a compact and robust vertically stacked architecture with a total volume of 0.11 m3 and a mass of 53.
View Article and Find Full Text PDFACS Omega
September 2025
Laboratório de Biotecnologia Farmacêutica (pbiotech), Faculdade de Farmácia, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ 21941-902, Brazil.
The crystallographic B-factor (Bf), also known as the Debye-Waller factor (DWF) or temperature factor, relates to the mean-square displacement of the atoms (X). X may be composed of individual contributions from lattice disorder (LT), static conformational heterogeneity (H) throughout the lattice, rigid body vibration (RB), local conformational vibration (V), and zero-point atomic fluctuation (A). The Bf has been widely employed as a surrogate measure of local protein flexibility, although such relation has not been confirmed.
View Article and Find Full Text PDFSmall
September 2025
Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China.
As a 2D material with distinctive ferroelectric properties, InSe offers significant potential for the applications in information memory and advanced data storage technologies. It also exhibits a complex phase diagram that is highly sensitive to temperature and pressure variations, resulting in diverse lattice configurations. While extensive studies have focused on the phase transition behavior of InSe, its impact on phonon transport remains largely unexplored.
View Article and Find Full Text PDFSci Adv
September 2025
Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology, Shenzhen 518055, China.
Here, we demonstrate unconventional scalable and sustainable manufacturing of flexible n-type BiTe films via physical vapor deposition and homo-layer fusion engineering. The achieved ultrahigh power factor of up to 30.0 microwatts per centimeter per square kelvin and ultralow lattice thermal conductivity of 0.
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