Controllable growth of MoO dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics.

The integration of two-dimensional (2D) semiconductors with high-κ dielectrics is critical for the development of post-silicon electronics. The key challenge lies in developing an ultra-thin high-κ dielectric with damage-free interface and sub-1 nm equivalent oxide thickness (EOT) for further continuation of Moore's law. Here we report the thickness-controlled free-standing growth of layered MoO dielectrics with EOT down to 0.

Oxygen Vacancy Induced 2D BiSeO Non-Volatile Memristor for 1T1R Integration.

Two-dimensional (2D) layered BiSeO, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D BiSeO nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced BiSeO memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 10), an extremely low off-state current (10 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET).

Ferroelectric α-InSe Semi-floating Gate Transistors for Multilevel Memory and Optoelectronic Logic Gate.

Progress in artificial intelligence (AI) demands efficient data storage and high-speed processing. Traditional von Neumann architecture, with space separation of memory and computing units, struggles with increased data transmission, causing power inefficiency and date latency. To address this challenge, we designed a semi-floating gate transistor (SFGT) that integrates data storage and logical operation into a single device by employing a ferroelectric semiconductor α-InSe as a semi-floating gate layer.

Reconfigurable Phototransistors Driven by Gate-Dependent Carrier Modulation in WSe/TaNiSe van der Waals Heterojunctions.

Reconfigurable field-effect transistors (RFETs) offer notable benefits on electronic and optoelectronic logic circuits, surpassing the integration, flexibility, and cost-efficiency of conventional complementary metal-oxide semiconductor transistors. The low on/off current ratio of these transistors remains a considerable impediment in the practical application of RFETs. To overcome these limitations, a van der Waals heterojunction (vdWH) transistor composed of WSe/TaNiSe has been proposed.

Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.

Resistive switching memories have garnered significant attention due to their high-density integration and rapid in-memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak-path current problem that limits their scalability. Here, a mild-temperature thermal oxidation technique for the fabrication of low-power and ultra-steep memristor based on Ag/TiO/SnO/SnSe/Au architecture is developed.

Chemical Dissolution-Assisted Ultrafine Grinding for Preparation of Quasi-Spherical Colloids of Zinc Oxide.

Submicron-sized quasi-spherical zinc oxide (ZnO) particles were prepared by wet ultrafine grinding in a stirred media mill under various conditions. The effects of parameters (i.e.

Synthesis of a Sm-doped YGaAl(BO) phosphor a mechanical activation-assisted solid-state reaction.

A Sm-doped YGaAl(BO) (abbreviated as YGAB) phosphor was synthesized a solid-state reaction with mechanical activation assistance in a high-energy density stirred bead mill. The samples were characterized by laser particle size analysis, specific surface area analysis, powder X-ray diffraction (XRD), scanning electron microscopy (SEM), differential scanning calorimetry (DSC), and fluorescence spectroscopy. In addition, the photoluminescence characteristics, luminescence decay, thermal stability, and LED application of the phosphors were also investigated.

Preparation of ternary amino-functionalized magnetic nano-sized illite-smectite clay for adsorption of Pb(II) ions in aqueous solution.

Ternary amino-functionalized magnetic illite-smectite (AMNI/S) nanocomposites were prepared via integrating two-dimensional illite-smectite nanoflakes (NI/S), magnetite nanoparticles (FeO), and 3-aminopropyltriethoxysilane (APTES). The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and vibrating sample magnetometry (VSM). The results show that FeO nanoparticles can be well dispersed on NI/S flakes and the hydrolyzed APTES molecules can simultaneously bond to the hydroxyl groups of FeO and NI/S.

Enhanced adsorption of cationic Pb(II) and anionic Cr(VI) ions in aqueous solution by amino-modified nano-sized illite-smectite clay.

A raw illite-smectite mixed-layered clay (RI/S) was ground for preparing nano-sized I/S clay (NI/S) and subsequently amino-functionalized via grafting of 3-aminopropyltrithoxysilane (APTES) (NH-RI/S and NH-NI/S, respectively). The samples were characterized by particle size analysis, specific surface area measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and Si nuclear magnetic resonance (Si NMR). Compared to RI/S, NI/S has a narrow particle size distribution and appears in a platelet-like morphology due to the disintegration/exfoliation of RI/S after grinding.

Disintegration of Nannochloropsis sp. cells in an improved turbine bead mill.

The Nannochloropsis sp. cells in aqueous solution were disintegrated in an improved bead mill with turbine agitator. The disintegration rates of cell samples disrupted under various operating parameters (i.