Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage "medium". Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrPS.
View Article and Find Full Text PDFNanomaterials (Basel)
April 2022
The transverse magnetoresistance () caused by inhomogeneous superconductivity is symmetric about the magnetic field around the critical magnetic field region. This has caused many disturbances during the study of vortex dynamics by Hall signals. Here, we found that the peak of measured in our samples was induced by the nonuniformity of the superconductors.
View Article and Find Full Text PDFNarrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAsSb nanowires remains a huge challenge.
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