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Actinic patterned mask inspection (APMI) is used to verify the quality of photomasks for EUV lithography by revealing eventual defects in the patterned mask layout. The current approach to APMI, based on conventional imaging, is expensive and challenging to scale to keep up with Moore's law. Ptychography offers a promising alternative for actinic EUV mask inspection by mitigating the need for expensive optics and providing better scalability compared to direct imaging approaches. However, the adoption of this lensless imaging method in semiconductor fabs is hampered by throughput challenges, which are due to the slow, iterative phase retrieval process and to the time-intensive data collection. In this study, we explore and demonstrate a rapid APMI method by exploiting a deep neural network (DNN) architecture which makes use of the extensive prior information available for photomask samples. Our aim is to achieve high-fidelity image reconstruction and identify defects in a photomask sample by processing only a small subset (less than 5% in this case) of the measured diffraction patterns using a network trained exclusively with synthetic data. We developed our DNN using both synthetic and experimental data, and finally, we tested the DNN with a completely synthetic dataset to ensure a clean split among training and test data and to prove that this approach can be used in a real situation with no external information on the mask defect content. Although the DNN was not able to accurately detect all the defects, we used the DNN prediction as a starting point for conventional ptychography and we demonstrated a significant improvement in reconstruction speed even with respect to the case where ptychography is initiated by an educated guess based on the prior knowledge of the mask layout. We conclude the paper by showing the outcome of a die-to-database inspection of a logic-like EUV mask pattern obtained with our approach.
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http://dx.doi.org/10.1364/OE.550387 | DOI Listing |
Actinic patterned mask inspection (APMI) is used to verify the quality of photomasks for EUV lithography by revealing eventual defects in the patterned mask layout. The current approach to APMI, based on conventional imaging, is expensive and challenging to scale to keep up with Moore's law. Ptychography offers a promising alternative for actinic EUV mask inspection by mitigating the need for expensive optics and providing better scalability compared to direct imaging approaches.
View Article and Find Full Text PDFThis study proposes an alternative illuminator based on the Fourier synthesis technology that provides a powerful and flexible way of controlling the coherent properties of illumination for extreme ultraviolet mask inspection. The illuminator achieves coherence control by programming the incident beam scanning a Fresnel zone plate and thus can provide free pupil-fill patterns. In this work, a visible laser-based laboratory microscopic imaging platform has been developed using the illuminator.
View Article and Find Full Text PDFInformation on the type and morphology of an extreme ultraviolet mask blank defect is of vital importance for mask blank repair and defect compensation. This study introduces an approach for defect type identification and three-dimensional (3D) morphology reconstruction based on photoemission electron microscopy. With the assistance of the neural network transfer learning method, the defect type can be precisely identified, and average error rates of 1.
View Article and Find Full Text PDFHigh-numerical-aperture (NA) anamorphic extreme ultraviolet lithography (EUVL) is the next-generation technology under advanced technology nodes. The design of the illumination system requires achieving better illumination uniformity while ensuring energy efficiency. However, the traditional four-mirror structure illumination system ignores the impact of energy efficiency.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Angstrom Patterning, IMEC, Leuven 3001, Belgium.
Continued device scaling demands improvements in lithographic resolution, which have historically been achieved by reducing wavelength and increasing numerical aperture (NA). With 0.33 NA EUV lithography now in production, current efforts are directed toward high-NA (0.
View Article and Find Full Text PDF