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Article Abstract
A critical challenge in flexible high-performance thin-film transistors (TFTs) is ensuring the reliability of the dielectric layer with a high-mobility semiconductor, which must maintain its insulating properties while withstanding repeated mechanical deformation. In this study, we investigate photo-cross-linkable photosensitive polyimide (PSPI), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-3,5-diaminobenzyl cinnamate (6FDA/DABC), as a dielectric material in oxide TFTs using zinc tin oxide or indium gallium zinc oxide as the channel materials. The photo-cross-linked PSPI dielectric exhibited a high areal capacitance of 17.5 nF cm at 1 kHz, an ultralow leakage current density of 10 A cm at 2 MV cm, and a breakdown field exceeding 6.7 MV cm under static conditions. Under repeated mechanical stress, the dielectric maintained its low leakage current and structural integrity after 10,000 bending cycles, ensuring a stable electrical performance. The photo-cross-linked PSPI and zinc tin oxide-based TFT device demonstrated excellent electrical characteristics, achieving a high mobility of 15.5 cm V·s, an on/off current ratio of 1.5 × 10, and good electrical stability under positive and negative bias stress, confirming its potential for high-performance, flexible TFT applications.
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| http://dx.doi.org/10.1021/acsami.5c07677 | DOI Listing |
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