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Article Abstract
We report low-threshold-current, high-yield InAs/InP quantum dot lasers in the C- and L-bands grown by metal-organic chemical vapor deposition (MOCVD). By optimizing the epitaxial growth conditions, including the introduction of a GaAs interfacial layer, we achieved more in-plane symmetric quantum dots with improved optical quality. Deep-etched ridge waveguide lasers with a 4 μm ridge width and top-top metal contacts were fabricated and characterized under pulsed injection. Low threshold currents of 17 mA and 28 mA were obtained for cavity lengths of 300 μm and 1000 μm, respectively. Temperature-dependent measurements showed lasing sustained up to 120 °C with a characteristic temperature T of 74.9 K below 90 °C.
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| http://dx.doi.org/10.1364/OE.568365 | DOI Listing |
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