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Computational competitions are the standard for benchmarking medical image analysis algorithms, but they typically use small curated test datasets acquired at a few centers, leaving a gap to the reality of diverse multicentric patient data. To this end, the Federated Tumor Segmentation (FeTS) Challenge represents the paradigm for real-world algorithmic performance evaluation. The FeTS challenge is a competition to benchmark (i) federated learning aggregation algorithms and (ii) state-of-the-art segmentation algorithms, across multiple international sites. Weight aggregation and client selection techniques were compared using a multicentric brain tumor dataset in realistic federated learning simulations, yielding benefits for adaptive weight aggregation, and efficiency gains through client sampling. Quantitative performance evaluation of state-of-the-art segmentation algorithms on data distributed internationally across 32 institutions yielded good generalization on average, albeit the worst-case performance revealed data-specific modes of failure. Similar multi-site setups can help validate the real-world utility of healthcare AI algorithms in the future.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12238412 | PMC |
http://dx.doi.org/10.1038/s41467-025-60466-1 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFNanotechnology
August 2025
Electrical and Computer Engineering, University of Sao Paulo Sao Carlos School of Engineering, Caixa Postal 359, CEP: 13560-590, Sao Carlos- SP, São Carlos, SP, 13566-590, BRAZIL.
This review addresses the compact modelling strategies for field-effect transistors based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modelling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic.
View Article and Find Full Text PDFSmall Methods
August 2025
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
2D transition metal dichalcogenide (TMDs) of monolayer molybdenum diselenide (MoSe) is an emerging semiconductor for next-generation electronics, owing to its remarkable physical and electronic properties. The realization of diverse device applications depends critically on the scalable synthesis of high-quality monolayer MoSe crystals, which remains challenging. In this study, the successful epitaxy of monolayer MoSe films is demonstrated on sapphire substrates at a maximum wafer size of 2 inches via a salt-assisted chemical vapor deposition (SA-CVD) technique.
View Article and Find Full Text PDFMater Horiz
August 2025
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Despite remarkable advancements in organic flexible electronics, performance variability and operational instability, rooted in weak van der Waals interaction correlated defects, remain long-standing challenges. Herein, we address these issues through a synergistic strategy integrating organic single crystals, surface doping, and source-gated transistors (SGTs). FTS ((tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane) monolayer decoration contributes to a trap-free and high-conductance (11.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2025
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea.
Developing intrinsically stretchable field-effect transistors (FETs) is critical for enabling next-generation flexible, wearable, and bio-integrated electronic systems. Unlike conventional stretchable devices that rely primarily on geometric engineering of rigid materials, intrinsically stretchable FETs involve materials that inherently withstand large mechanical deformation while preserving their electronic performance. Although significant progress is achieved in the field of stretchable devices, further innovation in semiconductor materials and compatible process technologies remains essential for advancing the field.
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