Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

Computational competitions are the standard for benchmarking medical image analysis algorithms, but they typically use small curated test datasets acquired at a few centers, leaving a gap to the reality of diverse multicentric patient data. To this end, the Federated Tumor Segmentation (FeTS) Challenge represents the paradigm for real-world algorithmic performance evaluation. The FeTS challenge is a competition to benchmark (i) federated learning aggregation algorithms and (ii) state-of-the-art segmentation algorithms, across multiple international sites. Weight aggregation and client selection techniques were compared using a multicentric brain tumor dataset in realistic federated learning simulations, yielding benefits for adaptive weight aggregation, and efficiency gains through client sampling. Quantitative performance evaluation of state-of-the-art segmentation algorithms on data distributed internationally across 32 institutions yielded good generalization on average, albeit the worst-case performance revealed data-specific modes of failure. Similar multi-site setups can help validate the real-world utility of healthcare AI algorithms in the future.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12238412PMC
http://dx.doi.org/10.1038/s41467-025-60466-1DOI Listing

Publication Analysis

Top Keywords

fets challenge
12
healthcare algorithms
8
federated tumor
8
tumor segmentation
8
segmentation fets
8
performance evaluation
8
federated learning
8
state-of-the-art segmentation
8
segmentation algorithms
8
weight aggregation
8

Similar Publications

Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS Devices Enabled by Plasma-Enhanced Atomic Layer Deposition.

ACS Appl Mater Interfaces

September 2025

Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.

The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.

View Article and Find Full Text PDF

This review addresses the compact modelling strategies for field-effect transistors based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modelling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic.

View Article and Find Full Text PDF

Wafer-Scale Growth of Monolayer MoSe via Salt-Assisted Chemical Vapor Deposition.

Small Methods

August 2025

Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.

2D transition metal dichalcogenide (TMDs) of monolayer molybdenum diselenide (MoSe) is an emerging semiconductor for next-generation electronics, owing to its remarkable physical and electronic properties. The realization of diverse device applications depends critically on the scalable synthesis of high-quality monolayer MoSe crystals, which remains challenging. In this study, the successful epitaxy of monolayer MoSe films is demonstrated on sapphire substrates at a maximum wafer size of 2 inches via a salt-assisted chemical vapor deposition (SA-CVD) technique.

View Article and Find Full Text PDF

Despite remarkable advancements in organic flexible electronics, performance variability and operational instability, rooted in weak van der Waals interaction correlated defects, remain long-standing challenges. Herein, we address these issues through a synergistic strategy integrating organic single crystals, surface doping, and source-gated transistors (SGTs). FTS ((tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane) monolayer decoration contributes to a trap-free and high-conductance (11.

View Article and Find Full Text PDF

Developing intrinsically stretchable field-effect transistors (FETs) is critical for enabling next-generation flexible, wearable, and bio-integrated electronic systems. Unlike conventional stretchable devices that rely primarily on geometric engineering of rigid materials, intrinsically stretchable FETs involve materials that inherently withstand large mechanical deformation while preserving their electronic performance. Although significant progress is achieved in the field of stretchable devices, further innovation in semiconductor materials and compatible process technologies remains essential for advancing the field.

View Article and Find Full Text PDF