Wafer-Scale Growth of Monolayer MoSe via Salt-Assisted Chemical Vapor Deposition.

2D transition metal dichalcogenide (TMDs) of monolayer molybdenum diselenide (MoSe) is an emerging semiconductor for next-generation electronics, owing to its remarkable physical and electronic properties. The realization of diverse device applications depends critically on the scalable synthesis of high-quality monolayer MoSe crystals, which remains challenging. In this study, the successful epitaxy of monolayer MoSe films is demonstrated on sapphire substrates at a maximum wafer size of 2 inches via a salt-assisted chemical vapor deposition (SA-CVD) technique. A clean, rapid, and complete transfer process assisted by deionized water only has also been developed for the transfer of as-grown monolayer MoSe films onto the target substrates. Field-effect transistors (FETs) fabricated from these monolayer MoSe films exhibited an impressive mobility of 39.1 cmVs and an on/off current ratio ranging from 10 to 10. These results underscore an effective and scalable strategy for the synthesis of high-quality TMDCs, paving the way for their integration into advanced electronic applications.