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Article Abstract
The scarcity of tellurium (Te) poses significant challenges to the widespread application of BiTe-based thermoelectric systems. In this work, we investigated the potential of Te-free PbSe for thermoelectric applications by optimizing carrier mobility through crystal growth and a two-step strategy of light alloying and doping. First, Cd alloying was employed to reduce the lattice thermal conductivity () of n-type PbSe through the off-center effect while preserving carrier mobility. Subsequent In doping enhanced the effective mass via the resonant level formation, achieving a high weighted mobility-to- ratio (/∼338.4) and a large power factor of 36.7 μW cm K at 300 K in the PbSe-0.008Cd-0.0008In crystal. Due to the reduced lattice thermal conductivity and largely promoted / value, the optimized PbSe-0.008Cd-0.0008In crystal exhibited a large value of ∼0.5 at 300 K, a maximum value of ∼1.3 at 673 K, and an average value of ∼1.1 (300-773 K). Additionally, a thermoelectric generator based on the PbSe-0.008Cd-0.0008In crystal achieves a power generation efficiency of 6.3%, while a 7-pair module (n-type PbSe-0.008Cd-0.0008In crystal and p-type commercial BiSbTe material) demonstrated a maximum cooling temperature difference (Δ) of 51.2 K ( = 353 K). This work establishes PbSe as a cost-effective, high-performance thermoelectric material for thermoelectric cooling and power generation.
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