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Article Abstract
X-ray response performances of a p-NiO/-GaO hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at -200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced by the trap-assistant conductive process of the HJD under reverse bias, which exhibited an increasing net (response) current, nonlinearity, and a long response time. After irradiation, the Poole-Frenkel emission (PFE) dominated the leakage current of HJDs due to the higher electric field caused by the increased net carrier concentration of -GaO. This conductive process weakened the performance of the HJD X-ray detector in terms of sensitivity, output linearity, and response speed. This study provided valuable insights into the radiation damage and performance degradation mechanisms of GaO-based radiation detectors and offered guidance on improving the reliability and stability of these radiation detectors.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11944653 | PMC |
| http://dx.doi.org/10.3390/mi16030339 | DOI Listing |
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