Method for In Situ On-Wafer Tensile Test of Thin Films.

Micromachines (Basel)

School of Integrated Circuits, Peking University, Beijing 100871, China.

Published: February 2025


Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

This study addresses the need for a mechanical property characterization of films during Micro-Electro-Mechanical System (MEMS) processing by proposing a novel in situ on-wafer tensile strength testing method for film materials. This method integrates the film specimen with a bulk silicon test structure during fabrication, allowing for tensile strength measurements with a resolution of 0.05 MPa using only a probe and optical microscope. Utilizing this method, we successfully performed in situ on-wafer tensile strength tests on Al films of various sizes, demonstrating the impact of the process on film mechanical properties. The results validate the potential of this structure for characterizing material mechanical properties and monitoring process quality in mass production.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11945766PMC
http://dx.doi.org/10.3390/mi16030262DOI Listing

Publication Analysis

Top Keywords

situ on-wafer
12
on-wafer tensile
12
tensile strength
12
mechanical properties
8
method
4
method situ
4
tensile
4
tensile test
4
test thin
4
thin films
4

Similar Publications

Method for In Situ On-Wafer Tensile Test of Thin Films.

Micromachines (Basel)

February 2025

School of Integrated Circuits, Peking University, Beijing 100871, China.

This study addresses the need for a mechanical property characterization of films during Micro-Electro-Mechanical System (MEMS) processing by proposing a novel in situ on-wafer tensile strength testing method for film materials. This method integrates the film specimen with a bulk silicon test structure during fabrication, allowing for tensile strength measurements with a resolution of 0.05 MPa using only a probe and optical microscope.

View Article and Find Full Text PDF

The synthesis of large-scale 2D conductive metal-organic framework films with tunable thickness is highly desirable but challenging. In this study, an Interface Confinement Self-Assembly Pulling (ICSP) method for in situ synthesis of 4-in. Ni-BHT film on the substrate surface is developed.

View Article and Find Full Text PDF

A novel 2-transistor (2T) pixel EUV detector is proposed and demonstrated by advanced CMOS technology. The proposed 2T detector also exhibits high spectral range (< 267 nm) and spatial resolution (67 μm) with high stability and CMOS Compatibility. The compact 2T EUV detector pixels arranged in a test array are capable of on-wafer recording the 2D EUV flux distribution without any external power.

View Article and Find Full Text PDF

Ultrabroadband Imaging Based on Wafer-Scale Tellurene.

Adv Mater

May 2023

State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China.

High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized.

View Article and Find Full Text PDF
Article Synopsis
  • The study focuses on the observation of hydrogen plasma charging effects in extreme ultraviolet (EUV) lithography using a specialized micro-detector array.
  • This array consists of 4,000 pixels that record and retain data on hydrogen plasma distributions without damaging the samples.
  • By analyzing the uniformity and distribution of hydrogen plasma intensity via voltage thresholds and average current measurements, researchers gain valuable insights into the operational conditions of EUV lithography chambers.
View Article and Find Full Text PDF