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This study addresses the need for a mechanical property characterization of films during Micro-Electro-Mechanical System (MEMS) processing by proposing a novel in situ on-wafer tensile strength testing method for film materials. This method integrates the film specimen with a bulk silicon test structure during fabrication, allowing for tensile strength measurements with a resolution of 0.05 MPa using only a probe and optical microscope. Utilizing this method, we successfully performed in situ on-wafer tensile strength tests on Al films of various sizes, demonstrating the impact of the process on film mechanical properties. The results validate the potential of this structure for characterizing material mechanical properties and monitoring process quality in mass production.
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http://dx.doi.org/10.3390/mi16030262 | DOI Listing |
Micromachines (Basel)
February 2025
School of Integrated Circuits, Peking University, Beijing 100871, China.
This study addresses the need for a mechanical property characterization of films during Micro-Electro-Mechanical System (MEMS) processing by proposing a novel in situ on-wafer tensile strength testing method for film materials. This method integrates the film specimen with a bulk silicon test structure during fabrication, allowing for tensile strength measurements with a resolution of 0.05 MPa using only a probe and optical microscope.
View Article and Find Full Text PDFSmall
November 2023
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
The synthesis of large-scale 2D conductive metal-organic framework films with tunable thickness is highly desirable but challenging. In this study, an Interface Confinement Self-Assembly Pulling (ICSP) method for in situ synthesis of 4-in. Ni-BHT film on the substrate surface is developed.
View Article and Find Full Text PDFDiscov Nano
June 2023
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
A novel 2-transistor (2T) pixel EUV detector is proposed and demonstrated by advanced CMOS technology. The proposed 2T detector also exhibits high spectral range (< 267 nm) and spatial resolution (67 μm) with high stability and CMOS Compatibility. The compact 2T EUV detector pixels arranged in a test array are capable of on-wafer recording the 2D EUV flux distribution without any external power.
View Article and Find Full Text PDFAdv Mater
May 2023
State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China.
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized.
View Article and Find Full Text PDFDiscov Nano
February 2023
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.